Abstract:A novel high speed capacitorless dynamic-random-access-memory(DRAM) with gated diode as its writing cell was proposed and investigated.This memory cell consisted of an n-type floating gate metal-oxide-semiconductor field effect transistor(MOSFET) and a gated diode.The p-type floating gate poly of n-type MOSFET functioned as p-type doping region of the gated diode,and also as the charge storing unit.The write 0 operation was executed by forwardly biasing the diode,and the write operation was executed by driving the gated diode to work in a tunneling field effect transistor(TFET) mode.In both circumstances,their active current density could be around 1 μA/μm,and so a high-speed programming operation was realized.The memory cell could be used as an embedded DRAM in SOC,since its fabrication process was compatible with that of flash memory and logic device.

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