Abstract:Based on the group velocity concept and the two-band model, we investigated tunneling properties of spin-polarized electrons traversing ferromagnetic/insulator (semiconductor) double junctions under the influence of an external electric field. The tunneling time and the transmission coefficient, as well as the spin polarization, were calculated and examined. Effects of the electric field and quantum size are also considered. The results indicate that the tunneling time strongly depends on the spin orientation of tunneling electrons. In a wide range of incident energy, spin-down electrons spend a longer time tunneling through the structure than spin-up ones, and the difference of the tunneling time Δτ between electrons with opposite spin orientation is very sensitive to the incident energy in the lower energy region. Moreover, the variation of Δτ with the increasing of the incident energy shows pronounced oscillations for certain applied bias and structural size. The results also indicate that spin polarization shows frequent wide-range oscillations and its magnitude decays slowly with the increasing of the incident energy, which reveal that the spin polarization in ferromagnetic/insulator (semiconductor) junctions possesses quite different properties from those exhibited in semiconductor electric-barrier or magnetic-barrier structures as well as semiconductor/semimagnetic semiconductor hybrid heterostructures.

Spin Tunneling in Ferromagnet–insulator–ferromagnet Junctions

Spin-dependent Thermal and Electrical Transport in a Spin-Valve System

Spin-Dependent Low-Frequency and Weakly Nonlinear Electrical Transport in Spin-Polarized Tunneling Junctions

Effect of Spin-Flip Scattering on Electrical Transport in Magnetic Tunnel Junctions

Spin-Polarized Tunneling and Magnetoresistance in Ferromagnet/Insulator(Semiconductor) Single and Double Tunnel Junctions Subjected to an Electric Field

Spin transfer torques and spin-dependent transport in a metallic F/AF/N tunneling junction

Tunneling Time of Spin-Polarized Electrons in Ferromagnet/insulator (semiconductor) Double Junctions under an Applied Electric Field

Spin Transfer and Critical Current for Magnetization Reversal in Ferromagnet-Ferromagnet-ferromagnet Double-Barrier Tunnel Junctions

Spin-Polarized Transport In Ferromagnet-Marginal Fermi Liquid Systems

Spin injection and magnetoresistance in ferromagnet/superconductor/ferromagnet tunnel junctions

Spin-polarized Inelastic Tunneling Through Insulating Barriers.

Spin-bias-induced Transport Through a Quantum Dot Coupled to a Ferromagnetic Lead

Tunneling Magnetoresistance Effect in Ferromagnet/quantum Dot/superconductor Junctions

Spin-Polarized Electron Tunneling Through A Quantum Dot

Injection of spin-polarized carriers in ferromagnet/superconductor tunnel junctions

Phase Inhomogeneity And Scaling In Ferromagnet-Unconventional Superconductor-Ferromagnet Double Tunnel Junctions

Quantum Transport in Normal-Metal/ferromagnet/spin-triplet Superconductor Junctions

Theoretical Consideration of Spin-Polarized Resonant Tunneling in Magnetic Tunnel Junctions

Tunneling Spectroscopy Using Spin Voltage

Spin Transport Properties of a Quantum Dot Coupled to Ferromagnetic Leads with Noncollinear Magnetizations

Enhanced Spin Injection Efficiency In Ferromagnet/Semiconductor Tunnel Junctions