Synthesis and Structures of High-Quality Single-Crystalline II3−V2 Semiconductors Nanobelts

Guozhen Shen,Yoshio Bando,Dmitri Golberg
DOI: https://doi.org/10.1021/jp068792s
2007-01-01
Abstract:Due to the difficulties, such as lack of generalized synthetic methodologies, production of amorphous materials, diffraction pattern problems, and instability in air, etc., associated with II3-V-2 semiconducting compounds (II and V indicate elements of Group II and Group V.), single-crystalline II3-V-2 nanostructures are intrinsically harder to prepare and it has been a great challenge to produce single-crystalline one-dimensional II3-V-2 nanostructures. Here, by using a mixture of ZnS (or CdS) and Mn3P2 as the source materials, we demonstrate the successful synthesis of high-quality single-crystalline Zn3P2 and Cd3P2 nanobelts. Systematic structural analyses, such as X-ray diffraction, scanning electron microscopy, high-resolution transmission electron microscopy, and energy dispersive spectrometer, were performed on these novel II3-V-2 nanomaterials. By a judicious choice of source materials, II3-V-2 nanobelts with compositions other than Cd3P2 and Zn3P2, such as Cd3As2, Zn3As2, etc., may also be fabricated.
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