Adsorption and Decomposition of 1,3-Disilabutane on Si (111)-7×7

WL Liu,HR Xia,XQ Wang,H Han,P Zhao,YB Lu,SQ Sun,YM Wang,HG Yoon,JH Boo,SB Lee,SC Park,H Kang
DOI: https://doi.org/10.1016/j.tsf.2004.02.038
IF: 2.1
2004-01-01
Thin Solid Films
Abstract:The adsorption and decomposition of 1,3-disilabutane (DSB) was studied on Si (111)-7×7 in the temperature range 100–1200 K by Cs+ reactive ion scattering and X-ray photoelectron spectroscopy (XPS). By combining the results of these two techniques, adspecies in the intermediate states during the decomposition of DSB were qualitatively identified and an adsorption model was proposed. At 100–150 K, DSB was found to adsorb on the surface as the C2H8Si2 species as well as CH4Si and to condense molecularly on a monolayer of C2H8Si2 adspecies. XPS indicates that the molecular species desorbs mostly at 200 K and completely at 300 K. Up to 600 K, the C2H8Si2 adspecies are converted to CH4Si with increasing temperature and then above this temperature the CH4Si species decomposes to form the SiC film. The intensity variations of Si (2p) and total C (1s) peaks and the analysis by curve fitting of the C (1s) peaks suggest that one CH4Si species leaves the system by cleavage of C–Si bonds in C2H8Si2 adspecies rather than to form two CH4Si adspecies, and the breakage probably occurs within the extremity ones in accordance with the double-bonded chemisorption character.
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