Killing Effect of E-ADM on K562 Cell Strain and Its Correlation with Multidrug Resistance Gene Expression

王书奎,王自正,立彦,杜同信,傅雷
DOI: https://doi.org/10.3969/j.issn.1006-1703.2006.04.013
2006-01-01
Abstract:To explore killing effect of E-ADM on K562 cell strain and its possible mechanism,the percentage and mean fluorescence intensity(MFI) of cell spontaneous fluorescence(SF~+),cell mortality rate(PI~+),and P170 expression of K562 cell strain were analyzed by flow cytometry after co-incubation with E-ADM by different concentration and different time span.The positive rate of SF~+,PI~+ and P170 began to increase at 0.01μg/mL of E-ADM,and increased immediately accompanied effecting curve as a "S" type,and effect of 24h were superior to those of 72h.The positive rate of SF~+,PI~+ and P170 expression increased with concentration of E-ADM,though without significant positive correlation(P0.05).Significant positive correlation existed between MFI of SF~+,PI~+ and P170 expression and concentration of E-ADM(P0.01),as well as among three markers(P0.01).E-ADM has obvious killing effect on K562 with a dosage sensitive region,optimistic killing concentration and the most suitable incubating time,which is positively related to E-ADM concentration.Results can provide valuable reference evidence for clinical application of E-ADM.
What problem does this paper attempt to address?