Broadening of Vibrational Levels in X-ray Absorption Spectroscopy of Molecular Nitrogen in Compound Semiconductors

M. Petravic,Q. Gao,D. Llewellyn,P. N. K. Deenapanray,D. Macdonald,C. Crotti
DOI: https://doi.org/10.1016/j.cplett.2006.05.056
IF: 2.719
2006-01-01
Chemical Physics Letters
Abstract:We have used high-resolution near-edge X-ray absorption fine structure spectroscopy to study the N 1s→1π∗ resonance of N2 trapped below the surface of several compound semiconductors. The vibrational fine structure, observed from all samples under consideration, exhibits substantially larger lifetime linewidth Γ than in isolated N2. A clear correlation between Γ and the lattice constant of the host matrix has been found, indicating that the broadening of vibrational levels is governed by a finite probability of the electron to escape from the π∗ orbital into the matrix.
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