Structural, Vibrational and Thermodynamics Propertiesof Zn-based Semiconductors

Y. Yu,H. L. Han,M. J. Wan,T. Cai,T. Gao
DOI: https://doi.org/10.1016/j.solidstatesciences.2009.04.007
IF: 3.752
2009-01-01
Solid State Sciences
Abstract:We have preformed first-principle calculations for the structural, vibrational and thermodynamic properties of the IIB-VIA Zn-based semiconductor compounds ZnX (X = O, S, Se, Te). The phonon dispersion curves along several high-symmetry lines at the Brillouin zone together with the corresponding phonon density of states are calculated using density-functional perturbation theory. The calculated phonon frequencies at the Gamma, X, and L points of the Brillouin zone show good agreement with the experimental values and other calculations. The thermodynamics properties including the phonon contribution to the Helmholtz free energy Delta F, the phonon contribution to the internal energy Delta E, the entropy S, and the constant-volume specific heat C-V are determined within the harmonic approximation based on the calculated phonon dispersion relations. If 298 K is taken as a reference temperature, the difference values of H - H-298 have been also calculated and compared with the available experimental data. Crown Copyright (C) 2009 Published by Elsevier Masson SAS. All rights reserved.
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