Abstract:Lacunar spinels, represented by AM4X8 compounds (A = Ga or Ge; M = V, Mo, Nb, or Ta; X = S or Se), form a unique group of ternary chalcogenide compounds. Among them, GeV4S8 has garnered significant attention due to its distinctive electrical and magnetic properties. While previous research efforts have primarily focused on studying how this material behaves under cooling conditions, pressure is another factor that determines the state and characteristics of solid matter. In this study, we employed a diamond anvil cell in conjunction with high-energy synchrotron X-ray diffraction, Raman spectroscopy, four-point probes, and theoretical computation to thoroughly investigate this material. We found that the structural transformation from cubic to orthorhombic was initiated at 34 GPa and completed at 54 GPa. Through data fitting of volume vs pressure, we determined the bulk moduli to be 105 ± 4 GPa for the cubic phase and 111 ± 12 GPa for the orthorhombic phase. Concurrently, electrical resistance measurements indicated a semiconductor-to-nonmetallic conductor transition at ∼15 GPa. Moreover, we experimentally assessed the band gaps at different pressures to validate the occurrence of the electrical phase transition. We infer that the electrical phase transition correlates with the valence electrons in the V4 cluster rather than the crystal structure transformation. Furthermore, the computational results, electronic density of states, and band structure verified the experimental observation and facilitated the understanding of the mechanism governing the electrical phase transition in GeV4S8.

High pressure–high temperature investigation of the stability of nitride spinels in the systems Si3N4–Ge3N4

EXPERIMENTAL STUDY ON THE PHASE RELATIONS OF THE SYSTEM Mg2SiO4-MgAl2O4 AT HIGH PRESSURE AND HIGH TEMPERATURE

Synthesis of tin(IV) nitride with spinel structure, γ-Sn3N4, from the elements and its Raman-spectroscopic examination at high pressures

High Pressure Behaviors and Novel High-Pressure Phase of Si3N4 and TiN

Isothermal Compression of the Spinel Phase of Ni2SiO4 Up to 300 Kilobars at Room Temperature

Investigations of meta-stable and post-spinel silicon nitrides

Origin of the Low Compressibility in Hard Nitride Spinels

Revealing the Defects Introduced in N- or Ge-doped Cz-Si by Γirradiation and High Temperature-High Pressure Treatment

High-Temperature High-Pressure Synchrotron X-Ray Diffraction Study Of C3n4

Crystal structures of two new high-pressure oxynitrides with composition SnGe4N4O4, from single-crystal electron diffraction

Hardness and Thermal Stability of Cubic Silicon Nitride

Theoretical Investigations of the High-Pressure Optical Properties of Γ-Si<sub>3</sub>n<sub>4</sub>

Raman spectroscopic study of liebenbergite and Ni2SiO4 spinel at high pressure and high temperature: nickel effects on the vibration properties of olivine and spinel structures

High-pressure Raman spectroscopy study of α-quartz-like Si1-xGexO2 solid solution

Pressure-Induced Changes in the Crystal Structure and Electrical Conductivity of GeV 4 S 8

High-Pressure Synthesis and Characterization of Ge-Doped Single Crystal Diamond

Theoretical investigations of the high-pressure optical properties of γ-Si 3N 4

High‐Pressure Synthesis of Cobalt Polynitrides: Unveiling Intriguing Crystal Structures and Nitridation Behavior

Magnetic Properties of GeNi$_{2-x}$Mg$_{x}$O$_{4}$ Under High Pressure and Magnetic Dilution

In Situ High P‐T X Ray Diffraction Studies on Three Polymorphs (α, Β, Γ) of Mg2SiO4

Characteristics of Diamond Crystals from FeNiCo-C System with Ge Doping under High Pressure and High Temperature