Abstract:We perform a full microscopic investigation on the spin relaxation in $n$-type (001) GaAs quantum wells with an ${\mathrm{Al}}_{0.4}{\mathrm{Ga}}_{0.6}\mathrm{As}$ barrier due to the D'yakonov-Perel' mechanism from nearly $20\phantom{\rule{0.3em}{0ex}}\mathrm{K}$ to room temperature by constructing and numerically solving the kinetic spin Bloch equations. We consider all the relevant scattering such as the electron-acoustic-phonon, the electron-longitudinal-optical-phonon, the electron-nonmagnetic-impurity, and the electron-electron Coulomb scattering to the spin relaxation. The spin relaxation times calculated from our theory with a fitting spin splitting parameter are in good agreement with the experimental data by Ohno et al. [Physica E (Amsterdam) 6, 817 (2000)] over the whole temperature regime (from $20\phantom{\rule{0.3em}{0ex}}\text{to}\phantom{\rule{0.3em}{0ex}}300\phantom{\rule{0.3em}{0ex}}\mathrm{K}$). The value of the fitted spin splitting parameter agrees with many experiments and theoretical calculations. We further show the temperature dependence of the spin relaxation time under various conditions such as electron density, impurity density, and well width. We predict a peak solely due to the Coulomb scattering in the spin relaxation time at low temperature $(l50\phantom{\rule{0.3em}{0ex}}\mathrm{K})$ in samples with low electron density (e.g., density less than $1\ifmmode\times\else\texttimes\fi{}{10}^{11}\phantom{\rule{0.3em}{0ex}}{\mathrm{cm}}^{\ensuremath{-}2}$) but high mobility. This peak disappears in samples with high electron density (e.g., $2\ifmmode\times\else\texttimes\fi{}{10}^{11}\phantom{\rule{0.3em}{0ex}}{\mathrm{cm}}^{\ensuremath{-}2}$) and/or low mobility. The hot-electron spin kinetics at low temperature is also addressed with many features quite different from the high-temperature case predicted.

Kinetic Theory Of Spin Transport In N-Type Semiconductor Quantum Wells

Theory of Spin Transport in an N-Typed GaAs Quantum Well

Spin Diffusion/transport in N-Type GaAs Quantum Wells

Diffusion and Transport of Spin Pulses in an N-Type Semiconductor Quantum Well

Mesoscopic and microscopic spin injection, spin precession, spin diffusion and spin transport in semiconductor nanostructures

Many-Body Effect in Spin Dephasing in N -Type GaAs Quantum Wells

Longitudinal Spin Decoherence in Spin Diffusion in Semiconductors

Kinetic Theory of Spin Coherence of Electrons in Semiconductors

Hot-electron Effect in Spin Dephasing in N-Type GaAs Quantum Wells

Multisubband Effect in Spin Dephasing in Semiconductor Quantum Wells

Open System Approach to Non-Equilibrium Dynamical Theory of Quantum Dot Systems

Spin Dephasing in N-Type Gaas Quantum Wells

Spin Oscillations In Transient Diffusion Of A Spin Pulse In N-Type Semiconductor Quantum Wells

Spin Relaxation in N-Type Gaas Quantum Wells from A Fully Microscopic Approach

Spin Relaxation In N-Type Gaas Quantum Wells With Transient Spin Grating

Spin relaxation time, spin dephasing time and ensemble spin dephasing time in n-type GaAs quantum wells

Kinetics Of Spin Coherence Of Electrons In N-Type Inas Quantum Wells Under Intense Terahertz Laser Fields

Non-Markovian Hole Spin Kinetics In P-Type Gaas Quantum Wells

Spin diffusion in $n$-type (111) GaAs quantum wells

Kinetics Of Spin Coherence Of Electrons In An Undoped Semiconductor Quantum Well

Electron-electron Scattering in the Diffusive Regime and Dyakonov-Perel Theory: a case study of spin decoherence in n-type GaAs