Abstract:The integration of two-dimensional (2D) materials with functional non-2D materials such as metal oxides is of key importance for many applications, but underlying mechanisms for such non-2D/2D interfacing remain largely elusive at the atomic scale. To address this, we here investigate the nucleation stage in atomic layer deposition (ALD) of the important metal oxide HfO2 on chemical vapor deposited graphene using atomically resolved and element specific scanning transmission electron microscopy (STEM). To avoid any deleterious influence of polymer residues from pre-ALD graphene transfers we employ a substrate-assisted ALD process directly on the as grown graphene still remaining on its Cu growth catalyst support. Thereby we resolve at the atomic scale key factors governing the integration of non-2D metal oxides with 2D materials by ALD: Particular to our substrate-assisted ALD process we find a graphene-layer-dependent catalytic participation of the supporting Cu catalyst in the ALD process. We further confirm at high resolution the role of surface irregularities such as steps between graphene layers on oxide nucleation. Employing the energy transfer from the scanning electron beam to in situ crystallize the initially amorphous ALD HfO2 on graphene, we observe HfO2 crystallization to non-equilibrium HfO2 polymorphs (cubic/tetragonal). Finally our data indicates a critical role of the graphene's atmospheric adventitious carbon contamination on the ALD process whereby this contamination acts as an unintentional seeding layer for metal oxide ALD nucleation on graphene under our conditions. As atmospheric adventitious carbon contamination is hard to avoid in any scalable 2D materials processing, this is a critical factor in ALD recipe development for 2D materials coating. Combined our work highlights several key mechanisms underlying scalable ALD oxide growth on 2D materials.

Highly Stable Monolayer Resists for Atomic Layer Deposition on Germanium and Silicon

Investigation of Self-Assembled Monolayer Resists for Hafnium Dioxide Atomic Layer Deposition

Self-assembled Monolayer Resist for Atomic Layer Deposition of HfO2 and ZrO2 High-Κ Gate Dielectrics

Dense Organosilane Monolayer Resist That Directs Highly Selective Atomic Layer Deposition

Controlling Area-Selective Atomic Layer Deposition of Hfo2 Dielectric by Self-Assembled Monolayers

Atomic Layer Deposition of Hafnium Oxide on Ge and GaAs Substrates: Precursors and Surface Preparation

Resolving the Controversial Existence of Silicene and Germanene Nanosheets Grown on Graphite.

Waterproof Molecular Monolayers Stabilize 2D Materials.

Organosulfide Inhibitor Instigated Passivation of Multiple Substrates for Area-Selective Atomic Layer Deposition of HfO 2

Preparation and Tribological Behaviors of an Amide-Containing Stratified Self-Assembled Monolayers on Silicon Surface

Resolving the Nucleation Stage in Atomic Layer Deposition of Hafnium Oxide on Graphene

Hydrophobic Surface Treatment and Interrupted Atomic Layer Deposition for Highly Resistive Al2O3 Films on Graphene

Spatial Control over Atomic Layer Deposition Using Microcontact-Printed Resists

Initial Surface Reactions in Atomic Layer Deposition of Hfsixoy and Hfo2: A Comparative Study by Density Functional Theory

Molecular monolayer stabilizer for multilayer 2D materials

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Area-Selective Atomic Layer Deposition Using Si Precursors as Inhibitors

Selective atomic layer etching of HfO2 over silicon by precursor and substrate-dependent selective deposition

Atomic Layer Deposition of HfS 2 on Functionalized Self-Assembled Monolayers on Ordered Oxide Surfaces: A Model Study under UHV Conditions

A single layer hydrogen silsesquioxane (HSQ) based lift-off process for germanium and platinum

Atomic layer deposition of stable 2D materials