In-Plane Anisotropy Formation of Co Thin Film Induced by Femn Covering Layer

Changjun Jiang,Desheng Xue,Xiaolong Fan,Qingfang Liu,Jianbo Wang
DOI: https://doi.org/10.1088/0022-3727/41/5/055002
2008-01-01
Abstract:A Co (40 nm) thin film and a Co (40 nm)/ Fe50Mn50(15 nm) bilayer are fabricated by radio frequency magnetron sputtering on a Si substrate. It is found that the Fe50Mn50 covering layer results in a decrease in the coercivity of the Co thin film. After high-vacuum magnetic heat treatments at 240 and 300 degrees C, a significant uniaxial anisotropy is induced only in the bilayer. A resonance peak at 3 GHz of the annealed bilayer is found in the permeability spectrum. The temperature dependence of magnetic hysteresis loops shows that the uniaxial anisotropy is related to the exchange coupling between the ferromagnet and the antiferromagnet layer.
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