Gas-flow assisted bulk synthesis of V-type SnO2 nanowires

Chen Ling,Weizhong Qian,Fei Wei
DOI: https://doi.org/10.1016/j.jcrysgro.2005.08.015
IF: 1.8
2005-01-01
Journal of Crystal Growth
Abstract:V-type SnO2 nanowires in large amount have been prepared by the thermal decomposition of SnO and vapor transport method at 1223K. The arms of V- , W- or Z-type nanowires pose the same angle of 68° and are monolithically single crystalline SnO2 with the growth facet indexed to be {101}, characterized by SEM, TEM, HRTEM and EDS. The formation of these zigzag SnO2 nanowires is attributed to the growth-facet change between (101) and (1¯01) in an energy-equally way, following the gas–solid growth mode. The formation of these structures is significantly enhanced by the turbulent gas flow, in the presence of a ceramic column in the reactor.
What problem does this paper attempt to address?