Electrochemical Fabrication of All Organic Heterojunction for Polythiophene and Its Derivatives

L Zhou,YQ Li,G Xue
DOI: https://doi.org/10.1002/(sici)1099-0488(19981130)36:16<2905::aid-polb5>3.0.co;2-0
1998-01-01
Journal of Polymer Science Part B Polymer Physics
Abstract:A new bind of all-organic heterojunction consisting of polythiophene and its derivatives was prepared by the electrochemical method in the presence of boron trifluoride diethyl ether as supporting electrolyte on indium-tin oxide glass electrode. It was observed that sequential-different oxidation potential among layers of polythiophenes is a prerequisite for the heterojunction to show rectification effect. The carrier-flow of the three semiconductors for PBrT/PT/PMT heterojunction was discussed in detail. Its rectification ratio, barrier height, and ideality factor were 392 (+/-2 V), 0.89 eV, and 8.1, respectively. (C) 1998 John Wiley & Sons, Inc.
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