Ferromagnetic Interfacial Interaction and the Proximity Effect in Aco2feal/(ga,mn)asbilayer
S. H. Nie,Y. Y. Chin,W. Q. Liu,J. C. Tung,J. Lu,H. J. Lin,G. Y. Guo,K. K. Meng,L. Chen,L. J. Zhu,D. Pan,C. T. Chen,Y. B. Xu,W. S. Yan,J. H. Zhao
DOI: https://doi.org/10.1103/physrevlett.111.027203
IF: 8.6
2013-01-01
Physical Review Letters
Abstract:The magnetic properties of a Co2FeAl/(Ga,Mn)As bilayer epitaxied on GaAs (001) are studied both experimentally and theoretically. Unlike the common antiferromagnetic interfacial interaction existing in most ferromagnet-magnetic semiconductor bilayers, a ferromagnetic interfacial interaction in the Co2FeAl/(Ga,Mn)As bilayer is observed from measurements of magnetic hysteresis and x-ray magnetic circular dichroism. The Mn ions in a 1.36 nm thick (Ga,Mn)As layer remain spin polarized up to 400 K due to the magnetic proximity effect. The minor loops of the Co2FeAl/(Ga,Mn)As bilayer shift with a small ferromagnetic interaction field of +24 Oe and -23 Oe at 15 K. The observed ferromagnetic interfacial coupling is supported by ab initio density functional calculations. These findings may provide a viable pathway for designing room-temperature semiconductor spintronic devices through magnetic proximity effect.