Optical Absorption Enhancement in Submicrometre Crystalline Silicon Films with Nanotexturing Arrays for Solar Photovoltaic Applications
Wei Wang,Jiasen Zhang,Yu Zhang,Ziang Xie,Guogang Qin
DOI: https://doi.org/10.1088/0022-3727/46/19/195106
2013-01-01
Abstract:Optical absorption enhancement in submicrometre silicon films with three types of nanotexturing arrays, i.e. a column-shaped nanohole (CLNH), and a cone-shaped nanohole (CNNH) and an inverted cone-shaped nanohole (I-CNNH) array, is studied via simulation. The ultimate efficiency, which is a function of the type of array, film thickness, array period and filling fraction, is optimized. We find that in all the CNNH (or I-CNNH) arrays with the same film thickness and the same period, the ones having a filling fraction equal to the critical value of 1 - pi/12 correspond to the highest ultimate efficiencies. For a given type of array and film thickness, the ultimate efficiency is optimized over the array period and filling fraction, which is defined as the optimized ultimate efficiency (OUE). In the three types of nanotextured silicon films with the same thickness in the range 250-2000 nm, the CNNH arrays show the highest optimized ultimate efficiency (OUE); however, the CLNH arrays show the highest OUEs when the film thickness is equal to 125 and 62.5 nm, and when the film thickness is in the range 500-2000 nm, the I-CNNH arrays show the lowest OUEs. The OUEs of 250 nm, 500 nm, 1000 nm and 2000 nm thick CNNH array textured silicon films are 19.88%, 28.51%, 34.06% and 39.53%, respectively. For the CNNH array, when the film thickness is reduced from 2000 nm to one-eighth, the OUE is only reduced to half its value.