Low threshold, actively Q-switched Nd3+:YVO4 self-Raman laser and frequency doubled 588nm yellow laser

Baoshan Wang,Huiming Tan,Jiying Peng,Jieguang Miao,Lanlan Gao
DOI: https://doi.org/10.1016/j.optcom.2006.10.065
IF: 2.4
2007-01-01
Optics Communications
Abstract:We reported an actively Q-switched, intracavity Nd3+:YVO4 self-Raman laser at 1176nm with low threshold and high efficiency. From the extracavity frequency doubling by use of LBO nonlinear crystal, over 3.5mW, 588nm yellow laser is achieved. The maximum Raman laser output at is 182mW with 1.8W incident pump power. The threshold is only 370mW at a pulse repetition frequency of 5kHz. The optical conversion efficiency from incident to the Raman laser is 10%, and 1.9% from Raman laser to the yellow.
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