Angle-Resolved Photoemission Study of Heavily Electron-Doped Bafe2-Xcoxas2

Y. Sekiba,T. Sato,K. Nakayama,K. Terashima,P. Richard,J. H. Bowen,H. Ding,Y. -M. Xu,L. J. Li,G. H. Cao,Z. -A. Xu,T. Takahashi

DOI: https://doi.org/10.1016/j.physc.2009.11.137

2010-01-01

Abstract:We report results of angle-resolved photoemission spectroscopy on a heavily electron-doped BaFe2−xCoxAs2. By using synchrotron-radiation light, we have investigated the band dispersion near the Fermi level (EF) of BaFe2−xCoxAs2 (x=0.3) for different wave vectors perpendicular to the crystal surface (kz). We find that observed holelike band does not cross EF around Γ or Z point of the Brillouin zone, unlike the optimally- or under-doped samples. The holelike band also shows a finite kz dispersion of about 20meV. These results indicate that the coexistence of hole and electron pockets connected by the antiferromagnetic wave vector plays an important role to the mechanism of superconductivity.