Photoresist-buffer-enhanced Antiferromagnetic Coupling and the Giant Magnetoresistance Effect of Co/Cu Multilayers

Yuan-fu Chen,Yongfeng Mei,Angelo Malachias,Jens Ingolf Moench,Rainer Kaltofen,Oliver G. Schmidt
DOI: https://doi.org/10.1088/0953-8984/20/45/452202
2008-01-01
Journal of Physics Condensed Matter
Abstract:By introducing a photoresist buffer layer, the enhancement of giant magnetoresistance (GMR) values of Co/Cu multilayers deposited on oxidized Si substrates is up to around 365%. X-ray reflectivity measurements indicate that the interfacial roughness of Co/Cu bilayer stacks buffered with a photoresist layer is lower than that on bare oxidized Si substrates, although their surface roughnesses are similar. Magneto-optical Kerr effect hysteresis loops of (Co/Cu)(N) multilayers show that the antiferromagnetic coupling strength and fraction were significantly improved after photoresist buffering for all samples with N ranging from 8 to 50. The interface smoothening of photoresist-buffered multilayers may therefore contribute to such an enhancement, which in turn increases the corresponding GMR values.
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