Abstract:Unprecedented control over the manufacture of electronic devices on nanometer scale has allowed to perform highly controllable and fine-tuned experiments in the quantum regime where exotic effects can nowadays be measured. In quantum dot devices, enhanced conductance below a characteristic energy scale is the signature of Kondo singlet formation. Precise predictions of quantum transport properties in similar nanoelectronics devices are desired to design optimal functionality and control. Standard transport methods suffer from limitations in nanostructure specifics, set-up design, temperature and voltage regime of applicability. To overcome these issues, such that we obtain modelling flexibility and accurate conductance predictions, in this thesis we analytically derive alternative and improved quantum transport formulations having as their starting point scattering theory in the Landauer-Büttiker formula, linear response theory in the Kubo formula, nonequilibrium Keldysh theory in the Meir-Wingreen formula and Fermi liquid theory in the Oguri formula. We perform a systematic benchmark of our exact expressions, comparing with the standard approaches using numerical renormalization group techniques. The new formulations not only reproduce literature results, but also show higher accuracy and computational efficiency, as well as a wider applicability under regimes and conditions out of reach by existing methods. We also derive generalized effective models for multi-orbital two-lead interacting nanostructures in both Coulomb blockade and mixed-valence regime, which yield reusable conductance predictions directly in terms of the effective model parameters. We conclude by applying our novel formulations to complex nanoelectronics systems, including a single-molecule benzene transistor, a charge-Kondo quantum dot made from graphene and semiconductor triple quantum dot.

Scattering-matrix formalism of electron transport through three-terminal quantum structures: formulation and application to Y-junction devices

Quantum Effects In The Transport Properties Of Nanoelectronic Three-Terminal Y-Junction Devices

First Principles Calculation on Quantum Transport of Au-Si 3 -Au Nanoscale Junction

Method of Calculations for Electron Transport in Multiterminal Quantum Systems Based on Real-Space Lattice Models

Scattering-Matrix Method For Ballistic Electron-Transport - Theory And An Application To Quantum Antidot Arrays

Multiterminal Multimode Spin-Dependent Scattering Matrix Formalism: Electron And Hole Quantum Spin Transport In Multiterminal Junctions

Molecular modeling of inelastic electron transport in molecular junctions.

Simulations of Electron Transport Through Three-Dimensional Quantum Structures

Monte Carle Simulation of Quantum Transport Through Nanostructures

Electron Transport Through A Double-Quantum-Dot Structure with Intradot and Interdot Coulomb Interactions

First-Principles Calculation Methods for Obtaining Scattering Waves to Investigate Transport Properties of Nanostructures

The Scattering Matrix Method for Quantum Waveguides

Electron Transport in Multi-Terminal Quantum Chain Systems Based on the Green'S Functions

Ballistic electron transport in lateral antidot arrays investigated by scattering-matrix method

Scattering Matrix Theory for Nonlinear Transport

A Molecular View on Electron Transport in Molecular Electronic Devices

Quantum transport in interacting nanodevices: from quantum dots to single-molecule transistors

Electrical Properties of Three-Terminal Ballistic Junctions

Many-Body Interaction Formulism of Electron Transport in Molecular Junctions

The anisotropic transport properties of the three-terminal ballistic junction based on α-T3 lattice

Single-molecule quantum-transport phenomena in break junctions