Controlling Novel Red-Light Emissions by Doping In2o3 Nano/Microstructures with Interstitial Nitrogen

Wenyan Yin,Daniel V. Esposito,Shizhong Yang,Chaoying Ni,Jingguang G. Chen,Guanglin Zhao,Zhengjun Zhang,Changwen Hu,Minhua Cao,Bingqing Wei

DOI: https://doi.org/10.1021/jp104259n

2010-01-01

Abstract:Red-light (620−750 nm) has promisingly been used as a primary phototherapy tool in the medical field that can easily penetrate through the body of patients. Here we report that interstitially N-doped In2O3 nano/microstructures including nanorods, nanoellipses, microspheres, and microbricks, show a unique, novel, and wide range red-light emission under 350 nm wavelength excitation, in addition to blue-light emissions. A new electronic transition mechanism suggests that the red-light emissions of the In2O3 nano/microstructures are originated from the interstitial nitrogen doping based on the first principles density functional theory computations. These newly developed red-light emission materials, N-doped In2O3 nano/microstructures, can be added into the red-light emission semiconductor family and will have significant application potential for optoelectronic devices such as red-light emitting diodes and lasers.