Designed Fano Resonance in Semiconductor Devices

H. C. Liu,C. Y. Song,Z. R. Wasilewski,J. A. Gupta,M. Buchanan

DOI: https://doi.org/10.2529/piers070904004351

2008-01-01

Abstract:We investigate Fano resonance mediated by intersubband and phonon coupling in specially designed GaAs/AlGaAs quantum well infrared photodetectors. This work presents a new approach for realizing designed quantum interference.

What problem does this paper attempt to address?

Designing Phonons For Active Use In Terahertz Devices

H. C. Liu,C. Y. Song,Z. R. Wasilewski,J. A. Gupta,M. Buchanan

DOI: https://doi.org/10.1117/12.807532

2009-01-01

Abstract:Semiconductor nanostructures, such as quantum wells and quantum dots, are well known, and some have been incorporated in applications. Here we propose a new general approach to make use of polar optical phonons in quantum wells for terahertz (THz) devices. As the first example, we show the coupling of phonon and intersubband transition leading to Fano resonance in photocurrent spectra. We investigate the phenomenon experimentally in specially designed GaAs/AlGaAs quantum well infrared photodetectors. Finally, we discuss the future research and potentials.
Design and Analysis of Ingaas Pin Photodetectors Integrated on Silicon-On-Insulator Racetrack Resonators

Fuquan Hu,Yongqing Huang,Xiaofeng Duan,Xinye Fan,Xiaomin Ren,Qi Wang,Xia Zhang,Xin Guo,Shiwei Cai

DOI: https://doi.org/10.1117/12.971430

2012-01-01

Abstract:The integration of optical functionalities on a chip has been a long standing goal in the optical community. The ability to integrate compound semiconductors onto foreign substrates can lead to superior or novel functionalities. In this paper we integrate InGaAs/InP photodetectors onto Silicon-on-Insulator (SOI) racetrack resonators. The racetrack resonators can be fabricated by utilizing electron beam lithography and inductively-coupled-plasma reactive ion etching (ICP-RIE) technique. The racetrack structure is used for wavelength selectivity and the straight waveguide sections are used to achieve a large value of the coupling coefficient with a bus waveguide. The transmission characteristic of the racetrack resonator with a multimode interference (MMI) coupler has been numerically simulated. The result shows that the free spectral range (FSR) is inversely proportional to the length of the racetrack resonator. The FSR decreases as the increase of the length of straight waveguide sections or the radius of rings. The generalized multimode transmission matrix of the MMI has been evaluated with beam-propagation method. It has been found that the resonance wavelength can be reasonably predicted. Finally, the equation of quantum efficiency of the device is derived. The calculated peak quantum efficiency of the designed photodetector can achieve about 90 % at 1.5499 mu m.
Realization of double Fano resonances with a InSb-doped Fabry-Perot cavity

Tao Zhang,Dan Zhang,Hai-Feng Zhang

DOI: https://doi.org/10.1016/j.rinp.2022.105417

IF: 4.565

2022-04-01

Results in Physics

Abstract:In this paper, a one-dimensional photonic structure is proposed for the realization of double Fano resonance (DFaR), which can be tuned by an external magnetic field and temperature. The designed photonic structure is composed of a Fabry-Perot cavity based on semiconductor material indium antimonide (InSb) and a sequence of general photonic crystals. A single Fano resonance (SFaR) is generated by the Fabry-Perot cavity, and the ordinary photonic crystals added to the back of the Fabry-Perot cavity offer a continuous transmission spectrum as a continuous state. The appearance of DFaR is ascribed to the interference phenomenon between SFaR and the continuous state. The effect of different parameters on Fano resonance was simulated by the transfer matrix method. The simulation results show that the interaction of the SFaR with the continuum spectrum leads to a new Fano resonance (NFaR) with a higher quality factor. Furthermore, DFaR can have the function of multi-physics tuning, controlled by the external magnetic field and temperature for the amplitude and frequency point of transmittance due to the introduction of InSb material. Based on the characteristics of DFaR, these obtained results can provide ideas for designing multi-measuring optical filters, lasers, slow light devices, and multi-node optical switches.

physics, multidisciplinary,materials science
Vertical field enhanced nanostructure for quantum well infrared photodetector through Germanium subwavelength arrays

wei dong,toru hirohata,kazutoshi nakajima,xiaoping wang

DOI: https://doi.org/10.1109/OMN.2013.6659060

2013-01-01

Abstract:Finite-difference-time-domain (FDTD) computer simulations reveal interesting features of Germanium (Ge) subwavelength nanostructures designed in x-y plane on substrate of InP with normal incidence, which can be applied in quantum well infrared photodetector (QWIP). Unlike the mechanism of excellent near field effects through periodic metallic nanostructures, large intensity of Ez field is achieved at near-infrared range by subwavelength arrays of Ge which has no surface plasmons (SPs). The evanescent Ez field generated along the surface of Ge is interpreted due to waveguide mode interference of coupled scattering. The existence of the enhanced field is confirmed by comparing the Fourier transform infrared (FTIR) spectra of real-fabricated samples with simulation outcomes. Positions of resonant peaks obtained in experiment are in good agreement with those of simulation. © 2013 IEEE.
Experimental Demonstration of Thermally Tunable Fano and EIT Resonances in Coupled Resonant System on SOI Platform

Zecen Zhang,Geok Ing Ng,Ting Hu,Haodong Qiu,Xin Guo,Wanjun Wang,Mohamed Saïd Rouifed,Chongyang Liu,Jiaxu Sia,Jin Zhou,Callum G. Littlejohns,Milos Nedeljkovic,Graham T. Reed,Hong Wang

DOI: https://doi.org/10.1109/jphot.2018.2839621

IF: 2.4

2018-01-01

IEEE Photonics Journal

Abstract:Thermally tunable Fano and electromagnetically induced transparency (EIT) resonances are theoretically and experimentally demonstrated based on a Mach-Zehnder interferometer assisted Bragg grating-microring coupled resonant system on silicon-on-insulator (SOI) platform. In this paper, the destructive and constructive coupling between the two resonators, the microring resonator and the Fabry-Perot resonator formed by two Bragg gratings, give rise to the Fano and EIT resonances, respectively. The resonance lineshape can be controlled and converted by tuning the optical path length of the MZI arm. The device performance has been theoretically analyzed by using a specially developed numerical model. The coupled resonant system was designed, fabricated, and characterized on a commercial (SOI) platform. The tuning and conversion of the resonance lineshape by thermo-optical effect have been experimentally observed and verified, with good agreement between the experimental data and the simulations.
Design of Sub wavelength-Grating-Coupled Fano Resonance Sensor in Mid-infrared

Yuhan Wang,Dianhong Wang,Xiangli Zhang,Tianye Huang,Xiang Zhao,Shuwen Zeng

DOI: https://doi.org/10.1007/s11468-020-01313-5

IF: 2.726

2020-10-24

Plasmonics

Abstract:By introducing the sub-wavelength grating (SWG) waveguide in the long-range surface phonon resonance (LRSPhR) device, a mid-infrared Fano resonance is formed due to the coupling between surface phonon polariton and Bloch mode. By taking advantage of strong light-matter interaction in the SWG, such Fano resonance is expected to offer improved sensing performance. Based on the rigorous coupled-wave analysis (RCWA) method, the index sensitivity and figure of merit of such a sensor reach 7496 RIU−1 and 46,432, respectively, which is 6 times compared with the conventional waveguide-coupled LRSPhR. The proposed SWG-coupled Fano resonance can be a promising platform for mid-infrared biochemical sensing.

materials science, multidisciplinary,nanoscience & nanotechnology,chemistry, physical
Ultra-sharp asymmetric Fano-like resonance spectrum on Si photonic platform

H Du,W Zhang,C G Littlejohns,S Stankovic,X Yan,D T Tran,G J Sharp,F Y Gardes,D J Thomson,M Sorel,G Z Mashanovich,G T Reed

DOI: https://doi.org/10.1364/OE.27.007365

2019-03-04

Abstract:In this paper, we report the generation of an ultra-sharp asymmetric resonance spectrum through Fano-like interference. This generation is accomplished by weakly coupling a high-quality factor (Q factor) Fabry-Pérot (FP) cavity and a low-Q factor FP cavity through evanescent waves. The high-Q FP cavity is formed by Sagnac loop mirrors, whilst the low-Q one is built by partially transmitting Sagnac loop reflectors. The working principle has been analytically established and numerically modelled by using temporal coupled-mode-theory (CMT), and verified using a prototype device fabricated on the 340 nm silicon-on-insulator (SOI) platform, patterned by deep ultraviolet (DUV) lithography. Pronounced asymmetric resonances with slopes up to 0.77 dB/pm have been successfully measured, which, to the best of our knowledge, is higher than the results reported in state-of-the-art devices in on-chip integrated Si photonic studies. The established theoretical analysis method can provide excellent design guidelines for devices with Fano-like resonances. The design principle can be applied to ultra-sensitive sensing, ultra-high extinction ratio switching, and more applications.
Fano Resonances in Ultracompact Silicon‐on‐Insulator Compatible Integrated Photonic–Plasmonic Hybrid Circuits

Zhipeng Qi,Guohua Hu,Pengfei Zheng,Ruigong Su,Wenhua Shi,Binfeng Yun,Ruohu Zhang,Yiping Cui

DOI: https://doi.org/10.1002/adom.201700304

IF: 9

2017-01-01

Advanced Optical Materials

Abstract:A novel on-chip Fano device is experimentally demonstrated operating at telecom wavelengths, which consists of an ultracompact plasmonic nanocavity integrated with two Si waveguides on a silicon-on-insulator substrate. It is observed that an Au symmetric split ring with a large linewidth can be coupled to an embedded Au nanorod with a narrow linewidth via excitation of an Si waveguide, contributing to a Fano resonance phenomenon. In addition, the relative precise control of the resonant properties, including the depth, lineshape, and central wavelength, is realized by varying the rotation angle of the Au nanorod. For further investigations, a coupled Lorentz oscillator model is applied to study the transmission peak arising within an absorption region in the nanocavity. Slow-light effects and sensing characteristics are also verified with finite difference time domain simulations and numerical calculations. This device has achieved Fano resonance in integrated photonic-plasmonic hybrid circuits, which may find utility in optical communications, buffering, and sensing.
Investigations of a coherently driven semiconductor optical cavity QED system

Kartik Srinivasan,Christopher P. Michael,Raviv Perahia,Oskar Painter

DOI: https://doi.org/10.1103/PhysRevA.78.033839

2008-06-26

Abstract:Chip-based cavity quantum electrodynamics (QED) devices consisting of a self-assembled InAs quantum dot (QD) coupled to a high quality factor GaAs microdisk cavity are coherently probed through their optical channel using a fiber taper waveguide. We highlight one particularly important aspect of this all-fiber measurement setup, which is the accuracy to which the optical coupling level and optical losses are known relative to typical free-space excitation techniques. This allows for precise knowledge of the intracavity photon number and measurement of absolute transmitted and reflected signals. Resonant optical spectroscopy of the system under both weak and strong driving conditions are presented, which when compared with a quantum master equation model of the system allows for determination of the coherent coupling rate between QD exciton and optical cavity mode, the different levels of elastic and inelastic dephasing of the exciton state, and the position and orientation of the QD within the cavity. Pump-probe measurements are also performed in which a far off-resonant red-detuned control laser beam is introduced into the cavity. Rather than producing a measurable ac-Stark shift in the exciton line of the QD, we find that this control beam induces a saturation of the resonant system response. The broad photoluminescence spectrum resulting from the presence of the control beam in the cavity points to sub-bandgap absorption in the semiconductor, and the resulting free-carrier generation, as the likely source of system saturation.

Quantum Physics,Mesoscale and Nanoscale Physics
Mid-Infrared Photoconductive Response in Algan/Gan Step Quantum Wells

X. Rong,X. Q. Wang,G. Chen,X. T. Zheng,P. Wang,F. J. Xu,Z. X. Qin,N. Tang,Y. H. Chen,L. W. Sang,M. Sumiya,W. K. Ge,B. Shen

DOI: https://doi.org/10.1038/srep14386

IF: 4.6

2015-01-01

Scientific Reports

Abstract:AlGaN/GaN quantum structure is an excellent candidate for high speed infrared detectors based on intersubband transitions. However, fabrication of AlGaN/GaN quantum well infrared detectors suffers from polarization-induced internal electric field, which greatly limits the carrier vertical transport. In this article, a step quantum well is proposed to attempt solving this problem, in which a novel spacer barrier layer is used to balance the internal electric field. As a result, a nearly flat band potential profile is obtained in the step barrier layers of the AlGaN/GaN step quantum wells and a bound-to-quasi-continuum (B-to-QC) type intersubband prototype device with detectable photocurrent at atmosphere window (3–5 μm) is achieved in such nitride semiconductors.
Fano Resonance in Artificial Photonic Molecules

Guangtao Cao,Shaohua Dong,Lei‐Ming Zhou,Qing Zhang,Yan Deng,Cong Wang,Han Zhang,Yang Chen,Cheng‐Wei Qiu,Xinke Liu

DOI: https://doi.org/10.1002/adom.201902153

IF: 9

2020-03-23

Advanced Optical Materials

Abstract:The spectral signatures of chemical molecules are dependent on the hybridization of electronic states. The artificial photonic molecules formed by structured optical microcavities, exhibiting Fano features with sharp asymmetric line shape and strong field enhancement, hold various potential applications in sensors, optical switches, lasing spasers, optical diodes, etc. To design high‐performance photonic devices, it is of great importance to gain the formation and modulation mechanisms of Fano resonance in various artificial photonic molecules. This review is focused on the Fano resonance in artificial photonic molecules. It starts by discussing the properties of Fano resonance, followed by a detailed discussion of the coupled oscillator model and coupled mode theory that could reveal the underlying mechanisms. Then, different types of photonic molecules for realizing Fano resonance are presented, and several representative exciting applications are introduced. Finally, a summary and a brief outlook on challenges are discussed for Fano resonance in artificial photonic molecules.

materials science, multidisciplinary,optics
Piezoelectrically driven Fano resonance in silicon photonics

I. Ansari,G. F. Feutmba,J. P. George,H. Rijckaert,J. Beeckman,D. Van Thourhout

DOI: https://doi.org/10.1063/5.0207482

IF: 5.6

2024-09-01

APL Photonics

Abstract:Piezoelectric optomechanical platforms provide a promising avenue for efficient signal transduction between microwave and optical domains. Lead zirconate titanate (PZT) thin film stands out as a compelling choice for building such a platform given its high piezoelectricity and optical transparency, enabling strong electro-optomechanical transduction. This work explores the application of such transduction to induce Fano resonance in a silicon photonics integrated circuit (PIC). Our methodology involves integrating a PZT thin film onto a silicon PIC and subsequently removing the SiO2 layer to suspend the silicon waveguide, allowing controlled mechanical vibrations. Fano resonances, characterized by their distinctive asymmetric line shape, were observed at frequencies up to 6.7 GHz with an extinction ratio of 21 dB. A high extinction ratio of 41 dB was achieved at the lower resonance frequency of 223 MHz. Our results demonstrate the potential of piezoelectric thin film integration for the generation of Fano resonances on passive photonic platforms such as Si, paving the way for highly sensitive, compact, and power-efficient devices relevant to a wide range of applications.

optics,physics, applied
Electromagnetically induced grating in asymmetric quantum wells via Fano interference.

Fengxue Zhou,Yihong Qi,Hui Sun,Dijun Chen,Jie Yang,Yueping Niu,Shangqing Gong

DOI: https://doi.org/10.1364/OE.21.012249

IF: 3.8

2013-01-01

Optics Express

Abstract:We propose a scheme for obtaining an electromagnetically induced grating in an asymmetric semiconductor quantum well (QW) structure via Fano interference. In our structure, owing to Fano interference, the diffraction intensity of the grating, especially the first-order diffraction, can be significantly enhanced. The diffraction efficiency of the grating can be controlled efficiently by tuning the control field intensity, the interaction length, the coupling strength of tunneling, etc. This investigation may be used to develop novel photonic devices in semiconductor QW systems. (C)2013 Optical Society of America
Third Harmonic Enhancement Due to Fano Interference in Semiconductor Quantum Well

J. Luo,Y. P. Niu,H. Sun,N. Cui,S. Q. Jin,S. Q. Gong,H. J. Zhang

DOI: https://doi.org/10.1140/epjd/e2008-00198-7

2008-01-01

Abstract:We investigate the emission spectra of the semiconductor quantum well for few-cycle and sub-cyclepulse exciting. We find that Fano interference may induce third harmonic enhancement. Thirdharmonic enhancement varies with the magnitude and duration of the incident pulse, and may beenhanced by approximately one order of magnitude for the low intensity region of the sub-cycleincident pulse exciting.
Dynamical resonance quench and Fano interference in spontaneous Raman scattering from quasiparticle and collective excitations

J. Zhu,R.B. Versteeg,P. Padmanabhan,P.H.M. van Loosdrecht

DOI: https://doi.org/10.1103/PhysRevB.99.094305

2019-02-07

Abstract:Time-resolved spontaneous Raman spectroscopy serves as a probe for incoherent quasiparticle and collective excitation dynamics, and allows to distinguish symmetry changes across a photoinduced phase transition through the inelastic light scattering selection rules. Largely unexplored is the role of the Raman resonance enhancement in the time-domain, and the transient interaction between scattering from quasiparticles and collective excitations, with the latter interaction leading to a Fano interference. In this work, we report on the observation of a phonon Raman tensor quench and Fano interference after strong photoexcitation of an intrinsic semiconductor. We observed a dynamic phonon scattering rate asymmetry and spectral asymmetry through simultaneous detection of both the anti-Stokes and Stokes response. The asymmetric phonon scattering rate is ascribed to the combined effect of the transient phonon population and the reduction of the phonon Raman tensor resulting from the photoexcited hole population. This same hole population results in a strong enhancement of the Fano spectral asymmetry.

Materials Science
Giant and Tunable Bosonic Quantum Interference Induced by Two-Dimensional Metals

Kunyan Zhang,Rinu Abraham Maniyara,Yuanxi Wang,Arpit Jain,Maxwell T. Wetherington,Thuc T. Mai,Chengye Dong,Timothy Bowen,Ke Wang,Slava V. Rotkin,Angela R. Hight Walker,Vincent H. Crespi,Joshua Robinson,Shengxi Huang

2024-10-01

Abstract:Harnessing quantum interference among bosons provides significant opportunities as bosons often carry longer coherence time than fermions. As an example of quantum interference, Fano resonance involving phonons or photons describes the coupling between discrete and continuous states, signified by an asymmetric spectral lineshape. Utilizing photon-based Fano resonance, molecule sensing with ultra-high sensitivity and ultrafast optical switching has been realized. However, phonon-based Fano resonance, which would expand the application space to a vaster regime, has been less exploited because of the weak coupling between discrete phonons with continuous states such as electronic continuum. In this work, we report the discovery of giant phonon-based Fano resonance in a graphene/2D Ag/SiC heterostructure. The Fano asymmetry, being proportional to the coupling strength, exceeds prior reports by two orders of magnitude. This Fano asymmetry arises from simultaneous frequency and lifetime matching between discrete and continuous phonons of SiC. The introduction of 2D Ag layers restructures SiC at the interface and facilitates resonant scattering to further enhance the Fano asymmetry, which is not achievable with conventional Ag thin films. With these unique properties, we demonstrated that the phonon-based Fano resonance can be used for ultrasensitive molecule detection at the single-molecule level. Our work highlights strong Fano resonance in the phononic system, opening avenues for engineering quantum interference based on bosons. Further, our findings provide opportunities for advancing phonon-related applications, including biochemical sensing, quantum transduction, and superconductor-based quantum computing.

Materials Science
A Designing Strategy for Fano Resonances in Molecular Junctions

Haoyang Pan,Peiqi Yang,Yudi Wang,Jie Li,Shi Li,Shimin Hou

DOI: https://doi.org/10.1021/acs.jpcc.3c03469

2023-01-01

Abstract:In single-molecule junctions, Fano resonance allows forefficientelectron transport modulation between constructive and destructiveinterferences over a small energy range and can be exploited to increasethe thermoelectricity and the sensitivity of single-molecule sensors.To explore the designing principles for Fano resonances, we have investigatedthe electronic transport properties of alkene- and naphthalene-basedmolecular junctions with molecular conductance orbitals (MCOs). AFano resonance arises from the destructive quantum interference dueto a pair of MCOs with opposite phases and comparable energies, forwhich one is more localized than the other. We introduce an asymmetryfactor to distinguish the Fano resonances from other destructive quantumfeatures. To increase the asymmetry factor, pendant groups coupledat the atomic site where the corresponding MCO has a zero coefficientcan be employed to induce and modulate antiresonances.
Optically Tunable Many‐Body Exciton‐Phonon Quantum Interference

Si‐Jie Chang,Po‐Chun Huang,Jia‐Sian Su,Yu‐Wei Hsieh,Carlos Jose Quiroz Reyes,Ting‐Hsuan Fan,Han‐Sheng Sun,Ai‐Phuong Nguyem,Te‐I Liu,Ho‐Wen Cheng,Ching‐Wei Lin,Michitoshi Hayashi,Chaw‐Keong Yong

DOI: https://doi.org/10.1002/advs.202404741

IF: 15.1

2024-09-02

Advanced Science

Abstract:Leveraging Floquet engineering, the remarkable tunability of Fano resonance in 1D nanostructures is demonstrated, even when the original discrete and continuum states are separated by over 1 eV, leading to the continuous transitions of Fano lineshapes from antiresonance to dispersive and to symmetric Lorentzian profiles, accompanied by significant variations in Fano parameter q and Raman intensity spanning 2 orders of magnitude. This study introduces a novel paradigm for achieving widely tunable many‐body Fano quantum interference in low‐dimensional semiconducting nanostructures, beyond the conventional requirement of closely matched energy levels between discrete and continuum states observed in atomic Fano systems. Leveraging Floquet engineering, the remarkable tunability of Fano lineshapes is demonstrated, even when the original discrete and continuum states are separated by over 1 eV. Specifically, by controlling the quantum pathways of discrete phonon Raman scattering using femtosecond laser pulses, the Raman intermediate states across the excitonic Floquet band are tuned. This manipulation yields continuous transitions of Fano lineshapes from antiresonance to dispersive and to symmetric Lorentzian profiles, accompanied by significant variations in Fano parameter q and Raman intensity spanning 2 orders of magnitude. A subtle shift in the excitonic Floquet resonance is further shown, achieved by controlling the intensity of the femtosecond laser, which profoundly modifies quantum interference strength from destructive to constructive interference. The study reveals the crucial roles of Floquet engineering in coherent light‐matter interactions and opens up new avenues for coherent control of Fano quantum interference over a broad energy spectrum in low‐dimensional semiconducting nanostructures.

materials science, multidisciplinary,nanoscience & nanotechnology,chemistry
Fano Resonance in Whispering Gallery Photonic Microcavities

Yun-Feng Xiao,Bei-Bei Li,Xue-Feng Jiang,Yan Li,Qihuang Gong

DOI: https://doi.org/10.1117/12.2000397

2012-01-01

Abstract:Fano resonances, sometimes behaving like electromagnetic induced transparency (EIT)-like resonances in whispering-gallery-mode (WGM) microcavities are attracting much attention due to the important applications in high-sensitivity biosensing, optical switch, and slow light. In this paper, Fano resonances in several WGM systems are reported, including in a single WGM photonic microcavity and in coupled WGM microcavities. Specifically, in a single WGM microcavity system, Fano or EIT-like resonances in both polydimethylsiloxane (PDMS) coated silica microtoroid and bare silica microtoroid are experimentally investigated. In coupled microcavity system, we report a theoretical study of EIT-like resonance in an array of microcavities indirectly coupled through a parallel waveguides system. Finally, we experimentally investigate the Fano resonance in two microcavities indirectly coupled via a single fiber taper.
Quantum-Tuned Cascade Multijunction Infrared Photodetector

Wenjia Zhou,Rui Xu,Haobo Wu,Xianyuan Jiang,Hao Wang,F. Pelayo García de Arquer,Zhijun Ning,F Pelayo García de Arquer

DOI: https://doi.org/10.1021/acsnano.3c03852

IF: 17.1

2023-09-22

ACS Nano

Abstract:Emerging applications such as augmented reality, self-driving vehicles, and quantum information technology require optoelectronic devices capable of sensing a low number of photons with high sensitivity (including gain) and high speed and that could operate in the infrared at telecom windows beyond silicon's bandgap. State-of-the-art semiconductors achieve some of these functions through costly and not easily scalable doping and epitaxial growing methods. Colloidal quantum dots (QDs), on the...

materials science, multidisciplinary,chemistry, physical,nanoscience & nanotechnology

Designed Fano Resonance in Semiconductor Devices

Designing Phonons For Active Use In Terahertz Devices

Design and Analysis of Ingaas Pin Photodetectors Integrated on Silicon-On-Insulator Racetrack Resonators

Realization of double Fano resonances with a InSb-doped Fabry-Perot cavity

Vertical field enhanced nanostructure for quantum well infrared photodetector through Germanium subwavelength arrays

Experimental Demonstration of Thermally Tunable Fano and EIT Resonances in Coupled Resonant System on SOI Platform

Design of Sub wavelength-Grating-Coupled Fano Resonance Sensor in Mid-infrared

Ultra-sharp asymmetric Fano-like resonance spectrum on Si photonic platform

Fano Resonances in Ultracompact Silicon‐on‐Insulator Compatible Integrated Photonic–Plasmonic Hybrid Circuits

Investigations of a coherently driven semiconductor optical cavity QED system

Mid-Infrared Photoconductive Response in Algan/Gan Step Quantum Wells

Fano Resonance in Artificial Photonic Molecules

Piezoelectrically driven Fano resonance in silicon photonics

Electromagnetically induced grating in asymmetric quantum wells via Fano interference.

Third Harmonic Enhancement Due to Fano Interference in Semiconductor Quantum Well

Dynamical resonance quench and Fano interference in spontaneous Raman scattering from quasiparticle and collective excitations

Giant and Tunable Bosonic Quantum Interference Induced by Two-Dimensional Metals

A Designing Strategy for Fano Resonances in Molecular Junctions

Optically Tunable Many‐Body Exciton‐Phonon Quantum Interference

Fano Resonance in Whispering Gallery Photonic Microcavities

Quantum-Tuned Cascade Multijunction Infrared Photodetector