Ab initio study of low-lying electronic states of the SiCO radical

Z.-L. Cai,Y.-F. Wang,H.-M. Xiao
DOI: https://doi.org/10.1016/0009-2614(92)85585-X
IF: 2.719
1992-01-01
Chemical Physics Letters
Abstract:The equilibrium geometries, excitation energies, force constants and vibrational frequencies for the low-lying electronic states X-3-SIGMA-, a1-DELTA, A 3-PI and 1 1-PI of the SiCO radical have been calculated at the MRSDCI level with a double-zeta plus polarization basis set. Our calculated excitation energy for A 3-PI --> X-3-SIGMA- and vibrational frequencies for these two states are in good agreement with experiment. Electronic transition properties for the A 3-PI --> X 3-SIGMA- transition, and the spin properties for the X 3-SIGMA-state are calculated based on the MRSDCI wavefunctions, predicting results in reasonable agreement with available experimental data.
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