Fabrication Of Yba2cu3o7 Ramp-Type Junctions By Interface Treatments

R. Dittmann,J.-K. Heinsohn,A. I. Braginski,C. L. Jia

DOI: https://doi.org/10.1109/77.783769

IF: 1.9489

1999-01-01

IEEE Transactions on Applied Superconductivity

Abstract:We have investigated ramp-type junctions with barriers fabricated by interface treatments instead of epitaxially grown barrier layers. In our approach? YBa2Cu3O7 ramps were treated with Ar ions in a Kaufmann-type source and subsequently annealed prior to the deposition of the top electrode. The I-V curves of the junctions as well as the power dependence of the Shapiro step height can be well described by the RSJ-model. At 77K the critical current density is 10 kA/cm(2), and the critical voltage is about 30 mu V. The strong modulation of the critical current with external magnetic field indicates the formation of a homogeneous barrier layer at the interface. The temperature dependence of critical current and normal resistance suggests a metallic barrier as interface layer.