Abstract:Al-doped beta-SiC powders were synthesized via combustion reaction of the Si/C system in a 0.1 MPa nitrogen atmosphere, using polytetrafluoroethylene as the chemical activator and Al as the dopant. The beta-SiC powders produced have fine spherical particles and narrow particle size distribution. The impurity phase of Al2O3 is generated and the doped beta-SiC contains N component when Al content is up to 10%. The electric permittivities of beta-SiC samples were determined in the frequency range of 8.2-12.4 GHz. Results show that the beta-SiC doped with 10% Al has the highest real part epsilon' and imaginary part epsilon " of permittivity. The mechanism of dielectric loss by doping has been discussed.

Preparation and Characterization of Aluminum-Doped Silicon Carbide by Combustion Synthesis