Effects of Contact Geometry on Transport Properties of A Si-4 Cluster

ZX Dai,XH Zheng,XQ Shi,Z Zeng
DOI: https://doi.org/10.1103/physrevb.72.205408
2005-01-01
Abstract:We investigate the effect of the contact geometry including the distances and the relative orientation on the electrical transport properties of a Si-4 cluster coupled to two atomic Al(100) electrodes based on a recently developed ab initio nonequilibrium Green's function formalism. The following situations are considered: the symmetric and asymmetric variation in two contact distances between a Si-4 cluster and electrodes, and the rotation of a Si-4 cluster around the y axis and z axis. Our results show that the equilibrium conductance is sensitive to the variation of the two contact distances and the rotation angle around the y axis and exhibits an oscillatory behavior. This oscillatory behavior is analyzed in terms of the eigenchannel decomposition of the conductance and the binding energy. Our analyses indicate that the effect of the distance on the equilibrium conductance is due to the variation of the transmission through the corresponding eigenchannels, which is induced by the cooperation or competition between the increase of the coupling strength and the shift of energy levels. However, the charge transfer is not the crucial factor to determine this oscillatory behavior of the equilibrium conductance. Most importantly, we also find that the existence of negative differential resistance (NDR) is strongly dependent on the contact distances and the rotation angles around the y axis. This indicates that NDR is not only related to the specific nanoscale conductors (molecules or clusters) but also sensitive to some specific experimental factors including the distances and the orientation between these conductors and the electrodes. All these results implicate that the determination of the contact structure is very essential to predict correctly the transport properties of the molecular conductors.
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