A Four-State Memory Cell Based on Magnetoelectric Composite

Zhan Shi,CuiPing Wang,XinJun Liu,CeWen Nan
DOI: https://doi.org/10.1007/s11434-008-0275-8
2008-01-01
Abstract:A four-state memory can store four states in each memory cell. We designed a four-state memory cell using Co/PZT magnetoelectric composite and observed a broad magnetoelectric hysteretic output loop on applying magnetic field. Based on magnetoelectric hysteresis, we developed a read method by applying a bias magnetic field on the memory cell. Results gave clearly four-state signals of 15.8, −4.4, 5.5 and −11.3 μV, which demonstrated the feasibility of our design.
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