Abstract:Hexagonal boron nitride (h-BN) is a critical material for 2D electronic devices for graphene and has attracted a considerable amount of attention owing to its structural similarity and semiconducting property. However, modifying its wide-band gap is a challenge. Hydrogenation is a potential method of altering the electrical properties, although is seldom experimentally measured. Here, the complex permittivity of h-BN after various hydrogen treatments have been investigated. For untreated h-BN, a frequency independent dielectric constant was measured ($\sim4.2 \pm0.2$) and an immeasurably low dielectric loss, demonstrating the ideal dielectric nature of h-BN across the $10^3$ to $10^{10}$ Hz range. However, after atomic H-plasma treatment in a microwave chemical vapour deposition (CVD) reactor, the complex permittivity amplifies dramatically, introducing dielectric dispersion through Debye-type dielectric relaxations ($\varepsilon_{\textrm{s}}\approx20\pm2$, $\varepsilon_{\infty}\approx4.2\pm0.2$) and a percolating long range conductivity ($\sim0.32$ mS/m). Annealing in molecular hydrogen at similar CVD temperatures showed minimal effect. Raman spectroscopy also detected minimal change in all samples, implying the increase is not due to other phases. This leads to the experimental conclusion that hydrogenation, through atomic H-plasma treatment, results in a moderate increase in room temperature electrical conductivity, an associated finite dielectric loss factor. The potential as a tunable wide-band gap semiconductor is highlighted however for insulating dielectric substrate applications, microwave CVD may destroy these desirable properties.

Electronic properties of two-dimensional hydrogenated and semihydrogenated hexagonal boron nitride sheets

Electronic and magnetic properties of a BN sheet decorated with hydrogen and fluorine

Atomic Layers of Hybridized Boron Nitride and Graphene Domains

Novel electronic and magnetic properties of BN sheet decorated with hydrogen and fluorine

Electronic and Structural Analysis of a Stable Hydrogenated BN sheet (BHNH): A First Principles Based Approach

Structural, mechanical, and electro-optical properties of hydrogenated graphene/h-BN heterobilayer

An Atomistic Approach for the Structural and Electronic Properties of Twisted Bilayer Graphene-Boron Nitride Heterostructures

Electronic and optical properties of h-BN nanosheet: A first principles calculation

Structure and Property Study by First-Principles Calculations: Two-dimensional Semi-Hydrogenated-semi-oxidized Bilayer BN (111)-Oriented Nanosheets

An accurate description of the structural and electronic properties of twisted bilayer graphene-boron nitride heterostructures

First-principles Study of Half-Metallicity in Semi-Hydrogenated BC3, BC5, BC7, and B-doped Graphone Sheets

The Electronic and Magnetic Properties of Chemically Decorated Boron Nitride Sheet

The Effects of Fluorination and Hydrogenation on the Physical Properties of Two-Dimensional (111)-Oriented Cubic Boron Nitride Nanosheets

Mechanical Properties of Hybrid Graphene and Hexagonal Boron Nitride Sheets As Revealed by Molecular Dynamic Simulations

Two and One-dimensional Honeycomb Structure of Boron Nitride

Tuning the Band Gap and Magnetic Properties of BN Sheets Impregnated with Graphene Flakes

First-Principles Calculations for the Impact of Hydrogenation on the Electron Behavior and Stability of Borophene Nanosheets: Implications for Boron 2D Electronics

Band gap engineering of 2D biphenylene carbon sheets with hydrogenation

Hyperhoneycomb Boron Nitride With Anisotropic Mechanical, Electronic, And Optical Properties

Electronic Structure, Optical Properties, and Potential Applications of n-BN/WS2 (n = 1 to 4) Heterostructures

Dielectric spectroscopy of hydrogenated hexagonal boron nitride ceramics