Abstract:The Hubbard model is one of the primary models for understanding the essential many-body physics in condensed matter systems such as Mott insulators and cuprate high-Tc superconductors. Recent advances in atomically precise fabrication in silicon using scanning tunneling microscopy (STM) have made possible atom-by-atom fabrication of single and few-dopant quantum dots and atomic-scale control of tunneling in dopant-based devices. However, the complex fabrication requirements of multi-component devices have meant that emulating two-dimensional (2D) Fermi-Hubbard physics using these systems has not been demonstrated. Here, we overcome these challenges by integrating the latest developments in atomic fabrication and demonstrate the analog quantum simulation of a 2D extended Fermi-Hubbard Hamiltonian using STM-fabricated 3x3 arrays of single/few-dopant quantum dots. We demonstrate low-temperature quantum transport and tuning of the electron ensemble using in-plane gates as efficient probes to characterize the many-body properties, such as charge addition, tunnel coupling, and the impact of disorder within the array. By controlling the array lattice constants with sub-nm precision, we demonstrate tuning of the hopping amplitude and long-range interactions and observe the finite-size analogue of a transition from Mott insulating to metallic behavior in the array. By increasing the measurement temperature, we simulate the effect of thermally activated hopping and Hubbard band formation in transport spectroscopy. We compare the analog quantum simulations with numerically simulated results to help understand the energy spectrum and resonant tunneling within the array. The results demonstrated in this study serve as a launching point for a new class of engineered artificial lattices to simulate the extended Fermi-Hubbard model of strongly correlated materials.

Electron Transport in an Array of Platinum Quantum Dots

Electron Transport Properties in Coalo Composite Antidot Arrays

Electron Transport Through A Double-Quantum-Dot Structure with Intradot and Interdot Coulomb Interactions

Correlated Electron Transport Through Parallel Double-Quantum-dot

Electron transport in finite one-dimentional quantum-dot arrays

The Relationship Between Quantum Transport and Microstructure Evolution in Carbon-Sheathed Pt Granular Metal Nanowires

Tuning the electrical conductance of oligo(phenylene-ethynylene) derivatives-PbS quantum-dot bilayers

Time-dependent electron transport through molecular quantum dots in the presence of external irradiation

Kondo Effect for Electron Transport Through an Artificial Quantum Dot

Power-law Behavior in Electron Transport Through a Quantum Dot with Luttinger Liquid Leads

Quantum Transport Through C48N12 Based Atomic Devices.

Electron Transport Through a 1D Chain of Dopant-Based Quantum Dots

Nonequilibrium Electron Transport Through a Quantum Dot from Kubo Formula

Exciton Transport in a Germanium Quantum Dot Ladder

Elongated quantum dot as a distributed charge sensor

Quantum Simulation of an Extended Fermi-Hubbard Model Using a 2D Lattice of Dopant-based Quantum Dots

Electromagnetic-Field-Induced Resonant Structures for an Open Rectangular Quantum Dot

Electron-phonon interaction and electronic correlations in transport through electrostatically and tunnel coupled quantum dots

Time-Dependent Electron Tunnelling Through A Quantum Dot With Coulomb Interactions

FLUCTUATIONS IN INELASTIC TUNNELING OF ELECTRONS THROUGH SERIALLY COUPLED DOUBLE QUANTUM DOTS