Electronic structure of a cyclooctatetraene derivative COT-H on Ru()

S.L Shi,P He,H.J Zhang,N Jiang,J.H Zhang,S.N Bao,P Lu,H Lou
DOI: https://doi.org/10.1016/s0921-4526(02)01524-7
2003-01-01
Abstract:The electronic structure of a cyclooctatetraene derivative COT-H deposited on Ru(101̄0) has been studied using ultra-violet photoemission spectroscopy (UPS). The highest occupied molecular orbital (HOMO) of COT-H and the other OCT-H derived features are located at about 1.8, 3.8, 5.6, 7.9 and 10.2eV in binding energy, respectively. With increasing thickness of the COT-H layer, the work function decreases from a value of 4.3eV on the Ru substrate to a COT-H bulk value of 3.3eV at a COT-H thickness of 25Å. The sharp decrease in work function at the beginning of COT-H deposition is attributed to dipole layer formed at the interface. Using the results from UPS spectra, and taking the optical band gap of 3.3eV as the HOMO–LUMO band gap of COT-H, the ionization potential of COT-H is determined to be 5.1eV, and the energy diagram at the COT-H/Ru interface is obtained.
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