Dislocation Bias in an Anisotropic Diffusive Medium and Irradiation Growth

CH WOO,U GOSELE
DOI: https://doi.org/10.1016/0022-3115(83)90198-8
IF: 3.555
1983-01-01
Journal of Nuclear Materials
Abstract:The anisotropic diffusion of irradiation-generated point defects to an isotropic distribution of dislocations is described. By solving the boundary-value problem in an anisotropic diffusion field of cylindrical symmetry, the sink strength of a dislocation in an hcp crystal is calculated as a function of the line-direction orientation with respect to the c-axis. The rate theory approach is then used to derive the irradiation growth rate. The theory is found to give a good semiquantitative description of irradiation growth in zirconium.
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