Abstract:The negative electron affinity (NEA) InxGa1-xAs photocathodes are of particular importance as a fundamental building block for the near infrared sensitivity image intensifier. However, a comprehensive understanding is still lacking of the activation mechanism in order to form NEA state. Here we perform a detailed theoretical research on the early stage of Cs adsorption on the As-rich beta(2)(2 x 4) reconstruction of In0.53Ga0.47As (0 0 1) surface by using first-principles calculations within the framework of density functional theory. Adsorption energies, work functions, dipole moments, band structures and density of states of In0.53Ga0.47As (0 0 1) beta(2) (2 x 4) surface corresponding to different Cs coverages are investigated. Calculation results indicate that Cs adsorption on In0.53Ga0.47As (0 0 1) beta(2)(2 x 4) surface becomes more and more difficult as Cs coverage increases. Cs-induced [Csn+-In-0(.)53 Ga0.47Asn-] dipoles are perpendicular to the substrate, which will decrease the work function and make the electrons easier to escape to the vacuum. However, excessive Cs adatoms will lead to the dipoles repelling each other, and some electrons return back to the substrate due to the electrostatic depolarization, resulting in the appearance of "Cs-kill" phenomenon and the work function rises again. Consequently, the optimal Cs coverage corresponding to the peak value of the InGaAs photocurrent should be considered in order to prevent the absence of the "Cs-kill" phenomenon. Meanwhile, there emerge new valence bands induced by Cs adsorption ranging from -25 eV to -22 eV and from -13 eV to 9 eV. Due to the combined effect of Cs 5s and 5p state electrons, the Fermi level moves into the conduction band, leading to the adsorption models showing more metallic properties.

Geometry and Core-Level Shifts of As on GaAs(110)

Geometry and Core-Level Shifts of an Adsorbed Sb Monolayer on GaAs(110)

Nonmetallic Behavior of Cs/GaAs(110)

Reconfiguration of GaAs (110) surface with the adsorption of Xe atoms

Surface Morphology of GaAs(001) Grown by Solid- and Gas-Source Molecular Beam Epitaxy

High-resolution Synchrotron-Radiation Core-Level Spectroscopy of Decapped GaAs(100) Surfaces

Early Stage of Cs Activation Mechanism for In0.53Ga0.47As (0 0 1) Β2 (2 × 4) Surfaces: Insights from First-Principles Calculations

Formation of the Ca/Gaas(110) Interface

Schottky-Barrier Formation at Nonreactive Interfaces - Ga/Gaas(100) and Pb/Gaas(100)

First Principle Research on Ga Rich GaAs0.5P0.5(001) Β2(4×2) and As(P) Rich Β2(2×4) Reconstruction Surfaces with and Without Cs Adsorption

Diffusion of an Extra Ga Atom in GaAs(001)(2 4) Rich-As Surface

Exploration of Cs–O co-adsorption on GaAs(100) β2(2×4) surface at different sites from first-principles calculation

Atomic Structure and Optoelectronic Properties of In0.53ga0.47as (100) Reconstruction Surfaces: A Dft Study

Morphology, chemistry, and band bending at Ag– and In–(100)GaSb interfaces

Band bending of cleaved GaAs(110) surface

Chemical And Electronic-Properties Of The Ag/Gasb(110) Interface Formed At Room And Low-Temperature

First-principles investigations of GaAs (112)-(2×2) surface reconstruction

Scanning tunneling microscopy and x-ray photoelectron spectroscopy studies of atomic level structure and Fermi level pinning on GaAs(110) surfaces grown by molecular beam epitaxy

Atomic structure of the Ge(001)-(7x5.5)-Ga surface

Photoemission Study of Chemisorption and Fermi-level Pinning at K/GaAs(1 0 0) Interface with Synchrotron Radiation

The Study of Ag Adsorbed on Ge(111) 2×1 Surfaces Using First-Principles Calculations