Narrow-Linewidth GaN-on-Si Laser Diode with Slot Gratings
Yongjun Tang,Meixin Feng,Jianxun Liu,Shizhao Fan,Xiujian Sun,Qian Sun,Shuming Zhang,Tong Liu,Yaping Kong,Zengli Huang,Masao Ikeda,Hui Yang,Yongjun Tang,Meixin Feng,Jianxun Liu,Shizhao Fan,Xiujian Sun,Qian Sun,Shuming Zhang,Tong Liu,Yaping Kong,Zengli Huang,Masao Ikeda,Hui Yang
DOI: https://doi.org/10.3390/nano11113092
IF: 5.3
2021-11-16
Nanomaterials
Abstract:This letter reports room-temperature electrically pumped narrow-linewidth GaN-on-Si laser diodes. Unlike conventional distributed Bragg feedback laser diodes with hundreds of gratings, we employed only a few precisely defined slot gratings to narrow the linewidth and mitigate the negative effects of grating fabrication on the device performance. The slot gratings were incorporated into the ridge of conventional Fabry-Pérot cavity laser diodes. A subsequent wet etching in a tetramethyl ammonium hydroxide solution not only effectively removed the damages induced by the dry etching, but also converted the rough and tilted slot sidewalls into smooth and vertical ones. As a result, the threshold current was reduced by over 20%, and the reverse leakage current was decreased by over three orders of magnitude. Therefore, the room-temperature electrically pumped narrow-linewidth GaN-on-Si laser diode has been successfully demonstrated.
materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology,chemistry