Synthesis and photoelectrochemical behavior of CdS quantum dots-sensitized indium–tin–oxide mesoporous film

Haining Chen,Liqun Zhu,Weiping Li,Huicong Liu
DOI: https://doi.org/10.1016/j.cap.2011.05.018
IF: 2.856
2012-01-01
Current Applied Physics
Abstract:In this paper, we reported an investigation on a new photoelectrode of quantum dots-sensitized solar cell (QDSC) combining indium–tin–oxide (ITO) mesoporous film and CdS quantum dots (QDs). The ITO mesoporous film was prepared by doctor-blade technique and CdS QDs attached on ITO mesoporous film were synthesized by successive ionic layer adsorption and reaction method. X-ray diffraction, field emission scanning electron microscopy, transmission electron microscope, X-ray spectroscopy and UV–vis spectroscopy were used to characterize the samples. The results indicated that the ITO mesoporous film was uniform, crack-free and highly porous. And absorbance in visible region was enhanced after the deposition of CdS QDs on ITO mesoporous film. The photoelectrochemical property of the CdS QDs-sensitized ITO mesoporous film photoelectrode was investigated by forming a photoelectrochemical cell. Photocurrent–voltage measurement showed that the photoelectrode was efficient in the cell as working electrode.
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