Optical Property of Hexagonal Nanocrystalline Zno Film on Si Substrate Prepared by Plasma-Enhanced Cvd

Z. Y. Xiao,Y. C. Liu,D. X. Zhao,J. Y. Zhang,Y. M. Lu,D. Z. Shen,X. W. Fan

DOI: https://doi.org/10.1016/j.jlumin.2006.01.298

IF: 3.6

2007-01-01

Journal of Luminescence

Abstract:In this paper, a two-step low-temperature growth method is reported for the fabrication of ZnO film. Hexagonal nanocrystalline ZnO film has been grown on a Si(100) substrate by plasma-enhanced chemical vapor deposition (PECVD) at a comparatively low temperature of 150°C. The X-ray pattern shows that the film has a c-axis preferential orientation in the (0002) crystal direction. SEM image indicates the film with a thickness of 300nm consists of nanocrystallites with hexagonal cross-section, and the diameters of the nanocrystallites range from 100 to 120nm.Room temperature photoluminescence (PL) spectrum exhibits a strong ultraviolet emission and the defect-related emission is negligibly weak. Possible reasons for low-temperature growth of high-quality Si-based ZnO film are discussed.