Abstract:Single-crystalline wurtzite GaN nanotubes have been synthesized recently with proposed applications in nanoscale electronics, optoelectronics, and the biochemical sensing field. In this work, molecular dynamics methods with a Stillinger-Weber potential have been used to investigate the melting behavior, thermal conductivity, and mechanical properties of wurtzite-type single-crystalline GaN nanotubes. (1) The simulations show that the melting temperature of the GaN nanotubes increases with the thickness of the nanotubes to a saturation value, which is close to the melting temperature of a bulk GaN. The results reveal that the nanotubes begin to melt at the surface, and then the melting rapidly extends to the interior of the nanotubes as the temperature increases. (2) The thermal conductivity of nanotubes is smaller than that of the bulk GaN single crystal. The thermal conductivity is also found to decrease with temperature and increase with increasing wall thickness of the nanotubes. The change of phonon spectrum and surface inelastic scattering may account for the reduction of thermal conductivity in the nanotubes, while thermal softening and high-frequency phonon interactions at high temperatures may provide an explanation for its decrease with increasing temperature. (3) The simulation results show that at low temperatures, the nanotubes show brittle properties, whereas at high temperatures, they behave as ductile materials. The brittle to ductile transition temperature generally increases with increasing thickness of the nanotubes and strain rate. (4) The simulation temperature, tube length, and strain rate all can affect the buckling behavior of GaN nanotubes. The critical stress decreases with the increase of simulation temperature and tube length. The tube length dependence of buckling is compared with those from the analysis of equivalent continuum structures using Euler buckling theory.

Molecular dynamics simulation on the buckling behavior of GaN nanowires under uniaxial compression

Molecular Dynamics Study Of Dynamic Buckling Properties Of Nanowires With Defects

Buckling of Gan Nanotubes under Uniaxial Compression

Molecular dynamics simulation on the buckling behavior of silicon nanowires under uniaxial compression

Buckling of Ge nanowires under uniaxial compression

Atomistic Simulation of the Torsional Buckling of Single-Crystalline GaN Nanotubes

Molecular dynamics study on the dependence of thermal conductivity on size and strain in GaN nanofilms

Atomistic Simulations of the Size, Orientation, and Temperature Dependence of Tensile Behavior in Gan Nanowires

Orientation and Temperature Dependence of the Tensile Behavior of GaN Nanowires: an Atomistic Study

Mechanical Responses of A-Axis GaN Nanowires under Axial Loads.

Physical Properties of GaN Nanotubes as Revealed by Computer Simulation

Simulation on the effects of torsion strain on the mechanical properties of SiC nanowires under tensile and compressive loading

Atomistic Level Studies on the Tensile Behavior of GaN Nanotubes under Uniaxial Tension

Mechanical Behavior Of Gallium Nitride Nanotubes Under Combined Tension-Torsion: An Atomistic Simulation

Atomistic Simulations Of The Mechanical Properties Of Silicon Carbide Nanowires

Mechanical Behavior of Twinned SiC Nanowires under Combined Tension-Torsion and Compression-Torsion Strain

Nanomechanical behavior of single taper-free GaAs nanowires unravelled by in-situ TEM mechanical testing and molecular dynamics simulation

Anelastic behavior in GaAs semiconductor nanowires.

Dynamic Buckling of a Nano-Wire of Crystal Copper

Atomistic Simulation of the Size and Orientation Dependences of Thermal Conductivity in GaN Nanowires

Tensile and compressive mechanical behavior of twinned silicon carbide nanowires