Local Epitaxial Templating Effects in Ferroelectric and Antiferroelectric ZrO2
Kisung Chae,Sarah F Lombardo,Nujhat Tasneem,Mengkun Tian,Harish Kumarasubramanian,Jae Hur,Winston Chern,Shimeng Yu,Claudia Richter,Patrick D Lomenzo,Michael Hoffmann,Uwe Schroeder,Dina Triyoso,Steven Consiglio,Kanda Tapily,Robert Clark,Gert Leusink,Nazanin Bassiri-Gharb,Prab Bandaru,Jayakanth Ravichandran,Andrew Kummel,Kyeongjae Cho,Josh Kacher,Asif Islam Khan
DOI: https://doi.org/10.1021/acsami.2c03151
2022-08-17
Abstract:Nanoscale polycrystalline thin-film heterostructures are central to microelectronics, for example, metals used as interconnects and high-K oxides used in dynamic random-access memories (DRAMs). The polycrystalline microstructure and overall functional response therein are often dominated by the underlying substrate or layer, which, however, is poorly understood due to the difficulty of characterizing microstructural correlations at a statistically meaningful scale. Here, an automated, high-throughput method, based on the nanobeam electron diffraction technique, is introduced to investigate orientational relations and correlations between crystallinity of materials in polycrystalline heterostructures over a length scale of microns, containing several hundred individual grains. This technique is employed to perform an atomic-scale investigation of the prevalent near-coincident site epitaxy in nanocrystalline ZrO2 heterostructures, the workhorse system in DRAM technology. The power of this analysis is demonstrated by answering a puzzling question: why does polycrystalline ZrO2 transform dramatically from being antiferroelectric on polycrystalline TiN/Si to ferroelectric on amorphous SiO2/Si?