Abstract:Organic light-emitting devices (OLEDs) with a novel metal iridium complex of bis[2-(4-tert-butylphenyl)benzothiazolato-N,C-2'] iridium (acetylacetonate) [(t-bt)(2)Ir(acac)] doping into a carbazole-based material 4,4'-bis[N-1-napthyl-N-phenyl-amino] biphenyl (CBP) as light-emitting layer (ETL) were fabricated. The optimum doping concentration of (t-bt) 2Ir(acac) phosphor was 8 wt%. The maximum power efficiency (eta(p)) of the OLED was 8 lm/W. Furthermore, to improve the balance of charge carriers and enhance the eta(p) of the device, a doping system consisted of NPB hole transporting material and CBP host material with a concentration proportion of 1: 3 was employed as the mixed hole transporting layer. OLEDs with a structure of indium-tin oxide (ITO)/N, N'-bis-(1-naphthyl)-N, N'-biphenyl-1,1'-biphenyl-4,4'-diamine (NPB): CBP(1: 3)/CBP:(t-bt) 2Ir(acac)/2, 9-dimethyl-4, 7-diphenyl-phenanthroline (BCP)/Mg:Ag were fabricated. The results showed that current density was decreased and the maximum eta(p) of the device was 10.6 lm/W. Compared with the conventional device with NPB as hole transporting layer, the improved maximum eta(p) of the device with mixed hole transporting layer was increased 32.5 %. This is attributed to the reduction of hole injection amount and transporting mobility by doping material CBP in hole transporting layer, which significant enhances charge carrier balance and electron-hole recombination probability.

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