Abstract:As the boundary condition was dropped down to the nanometer scale, the photo electronic properties can be changed dramatically especially that the photon luminescence (PL) properties may be changed significantly. Because two of the dimensions is comparable to or even smaller than the wavelengths of the PL, the nanowires are expected to show a variety of quantum confinement effects, such as density of state singularities, macro molecular behaviour over the long distances, high coherence of the emission, much high luminescence efficiency and low lasing threshold which is essential to construct novel integrated photo electronic devices in nanoscale. Besides, the high surface-tovolume ratio of these nanostructures also allows studying the role of surface states (and their ambient-driven changes) in determining the nanostructure carrier transport and optical excitation/recombination properties. The surface state and quantum confinement are two fundamental effects responsible to the photo electronic characteristic of nanostructures. Naturally the photoelectronic properties determine the future application for nanostructures including nanoparticles, nanowires, nanorods and so on. For example photo electronic properties determine whether the nanowires fabricated are suitable for such electronic application as field emission and photo-detection etc. Meanwhile many kinds of nanowires whose bulk materials can be used as photo luminescent sources are taken granted as the nanolaser active media. Such an idea needs lots of experiment to examine and confirm by the data of both the steady-state spectroscopy and time-resolved spectroscopy dynamically. Therefore we demonstrate a series studies on dynamic mechanism of nanowires (1 dimensional structure) and nanoparticles (0 dimensional structures) with respect to time, excitation density and photonic energy of PL. The sample focused are zinc oxide (ZnO)(Wang et al., 2009), carbon silicon (SiC)(Zhao et al., 2007), tungsten oxide (WO) covering both direct bandgap semiconductor and indirect bandgap semiconductors. The following will present the surface state effect on nanoparticles, ultrafast light emission from nanowires and directional lasing behaviour from nanotree. The mechanism of the ultrafast light emission will be discussed qualitatively.

Photoluminescence Property of Co 3 O 4 Nanowires

Synthetic and Effect of Annealing on the Luminescent Properties of Zno Nanowire

Synthesis and Physical Properties of Co3O4 Nanowires

Fabrication and Photoluminescent Characteristics of La2O3:Eu3+nanowires

Photoluminescence Properties of Co-doped ZnO Nanorods Array Fabricated by the Solution Method

The Photoluminescence Spectra of the Exciton Fine Structure in Cu2 O Nanowires

Room Temperature Photoluminescence Properties of CuO Nanowire Arrays

Xultraviolet-Visible Emission From Three-Dimensional Wo3-X Nanowire Networks

Hydrothermal Preparation and Photoluminescence Property of Co-Doped ZnO Nanorods

Synthesis And Photoluminescence Properties Of Sm3+-Doped Ca-10(Po4)(6)(Oh)(2) Nanowire

Photoluminescent Properties of Copper-Doped Zinc Oxide Nanowires

Abnormal Photoluminescence Properties of Polycrystalline ZnO Nanowire Arrays Synthesized by Electrodeposition

Large-scale Synthesis and Photoluminescence of Cobalt Tungstate Nanowires

Preparation and Photoluminescence Properties of ZnO Nanowire/Nanorod Mix Arrays

Stimulated Emission from Trapped Excitons in SnO2 Nanowires

Fabrication and Performance of Lu2O3:Eu3+ Nanowire Arrays with Different Nanowire Diameters

Investigation of Luminescence Properties of ZnO Nanowires at Room Temperature

Synthesis and VUV Luminescent Properties of LaPO4:Eu3+ Nanowires

Photoluminescence Properties and Energy Transfer in Y 2 O 3 :Eu 3+ Nanophosphors

P-type Electrical, Photoconductive, and Anomalous Ferromagnetic Properties of Cu2O Nanowires

Ultrafast Photoluminescence In Nanowires