A Dual Core Oxide 8T SRAM Cell with Low Vccmin and Dual Voltage Supplies in 45nm Triple Gate Oxide and Multi Vt CMOS for Very High Performance Yet Low Leakage Mobile SoC Applications
Ping Liu,Joseph Wang,Michael Phan,Manish Garg,Ron Zhang,Amer Cassier,Lew Chua-Eoan,Boris Andreev,Sebastien Weyland,Shashank Ekbote,Michael Han,Jeff Fischer,Geoffrey C-F Yeap,Ping-Wei Wang,Quincy Li,C. S. Hou,S. B. Lee,Y. F. Wang,S. S. Lin,M. Cao,Y. J. Mii
DOI: https://doi.org/10.1109/vlsit.2010.5556200
2010-01-01
Abstract:In this work we have demonstrated, for the first time, a 0.605µm2 dual core oxide (DCO) dual Vdd 8T SRAM cell in 45LPG triple gate oxide CMOS process for use as L1 cache for high performance low leakage mobile applications. The DCO 8T SRAM operates under dual voltage supplies with write assist. Compared to traditional single-end 8T cell, DCO 8T SRAM showed the same performance with only half the standby leakage, and lower Vccmin. The PU Vt and dual core oxide boundary were optimized to achieve robust Vccmin, process margin and reliability. The 45LPG thin core transistors and the DCO 8T SRAM are able to achieve 1.5GHz speed with ∼500mW at 0.9V and a low Vccmin of 0.6V.