Influence of Lateral Size on Dielectric Properties of Ferroelectric Thin Films with Structure Transition Zones

Zhou Jing,Lue Tian-Quan,Xie Wen-Guang,Cao Wen-Wu
DOI: https://doi.org/10.1088/1674-1056/18/7/074
2009-01-01
Chinese Physics B
Abstract:By taking into account structural transition zones near the lateral and thickness direction edges,this paper uses a modified transverse Ising model to study dielectric properties of a finite size ferroelectric thin film in the framework of the mean-field approximation.The results indicate that the influence of the lateral size on the dielectric susceptibility cannot be neglected and lateral structural transition zones could be a crucial factor that improves the mean susceptibility of the fixed size film.
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