Abstract:Electrical and thermal transport in silicon germanium superlattice nanostructures has received extensive attention from scientists for understanding carrier properties at the nanoscale, and the figure-of-merit (ZT) reported in such structures has inspired engineers to develop cost-effective waste heat recovery systems. In this paper, the thermoelectric transport properties of the silicon-based superlattice- and anti-superlattice-nanocrystalline heterostructures are systematically studied by first-principles and molecular dynamics simulations combined with the Boltzmann transport theory. The thermal conductivity, which is thought to be the essential bottleneck for bulk crystalline Si to gain a high ZT value, of such structures is found to be reduced by two orders of magnitude and reaches a level far below the amorphous limit of Si. This is achieved due to the extremely strong phonon-boundary scattering at both grain boundaries and Si-Ge interfaces, which will lead to the phonon mean free path being much smaller than the grain size (Casmir limit): for instance, the dominant phonons are in range of 0.5 to 3 nm for the heterostructures with a grain size of around 8 nm. Meanwhile, the power factor can be preserved at the level comparable to bulk crystalline because of the quantum confinement effect, which resulted from the conduction band minima converge, reduction of band gap, and the short mean free path of carriers. As a result, the ZT of such superlattice based nanomembranes can reach around 0.3 at room temperature, which is two orders of magnitude higher than the bulk crystalline case. The corresponding bulk superlattice-nanocrystalline heterostructures possess a ZT value of 0.5 at room temperature, which is superior to all other bulk silicon-based thermoelectrics. Our results here show that nanostructuring the superlattice structure can further decrease the thermal conductivity while keeping the electrical transport properties at the bulk comparable level, and provides a new strategy for enhancing the thermoelectric performance of the silicon-based nanostructures.

Multilayer Thermionic Transport in Semiconductor Superlattices

Theory of high-field transport in semiconductor superlattice structures

Thermoelectric Figure of Merit for Parallel Transport in Superlattices

Multiphysics Modeling and Simulation of Carrier Dynamics and Thermal Transport in Monolayer MoS2/WSe2 Heterojunction

Nonlinear electron and spin transport in semiconductor superlattices

Anomalous Temperature Effect in Weakly Coupled Superlattices: Carrier Transport in a THz Quantum Cascade Laser

HOT-ELECTRON MAGNETO-MINIBAND TRANSPORT IN LATERAL SEMICONDUCTOR SUPERLATTICES

Miniband Bloch Conduction in Semiconductor Superlattices

Towards Accurate Predictions of Carrier Mobilities and Thermoelectric Performances in 2D Materials

Balance-equation Analysis of Hot-Carrier Transport in a Type-Ii Semiconductor Superlattice

Calculation of the effective thermal conductivity of a superlattice based on the Boltzmann transport equation using first-principle calculations

Semiconductor Superlattice Transport-Properties

Two-Dimensional Molecular Dynamics Simulation of the Thermal Conductance of Superlattices

Thermoelectric figure of merit enhancement in dissipative superlattice structures

A non-Boltzmann balance equation approach to electronic transport in a type-I superlattice

Dynamics of electronic transport in a semiconductor superlattice with a shunting side layer

Thermoelectric transport in coupled double layers with interlayer excitons and exciton condensation

Effect of Electron-Phonon and Electron-Impurity Scattering on Electronic Transport Properties of Silicon/Germanium Superlattices

First-principles and Molecular Dynamics Study of Thermoelectric Transport Properties of N-type Silicon-Based Superlattice-Nanocrystalline Heterostructures

Nonlinear Electronic Transport Equations for Tunneling Superlattices

Ab initio Calculation of the Effective Thermal Conductivity Coefficient of a Superlattice Using the Boltzmann Transport Equation