Abstract:Resonance enhanced Raman spectroscopy is a simple, quick, non-destructive and powerful tool for the characterization of single-walled carbon nanotubes (SWNTs). Raman spectroscopy can be used to obtain information about both the geometry structure and the electronic density of states of SWNTs, including isolated individual SWNTs. In this review, the characteristics of the main Raman active modes of SWNTs, including radial breath mode (RBM), G-band, D-band and G'-band were stated, and the application of Raman spectroscopy in the characterization of the diameter and chirality of SWNTs, strained SWNTs, defects and doping in SWNTs, and the temperature-dependence of the structures of SWNTs were summarized. The diameter of SWNTs can be calculated from the frequency of RBM (ωRBM), according to an equation which is slightly varied with the type of SWNT samples. Furthermore, by combining the Raman resonance condition, ωRBM and Kataura plot, both information of electronic conducting properties, electron transition energy, and (n, m) of SWNTs could be obtained. With application of uniaxial strain, the D-band, G-band and G'-band of SWNTs shift due to the change of C—C distance, according to which the strain applied on SWNTs can be measured. At the same time, the Raman resonance intensity varies, which is attributed to the influence of uniaxial strain on the electronic structure of SWNTs. Raman spectroscopy can also be used to characterize radial deformation of SWNTs. It is found that the variation of frequency and intensity of RBM with the application of radial deformation shows dependence on the diameter and chirality of SWNTs. Theoretically, G-band will change under bending deformation, while experimental verification is still in needs due to difficulties of bend deformation of SWNTs in experiments. Besides, Raman spectra of SWNTs can be used to monitor the temperature of SWNTs due to the sensentivity of Raman spectra to photon properties. The Raman spectra of SWNTs upshift with the increase of temperature and the Raman resonance intensity varies with the change of temperature. Interestingly, the temperature coefficiency of ωRBM was found to be diameterand chirality-dependent, while that of ωG did not show such effects. The intensity of Raman D-band of SWNTs varies with the concentration of defects in SWNTs, according to which the defects in SWNTs can be conveniently characterized. Besides, for doped SWNTs, shift of frequency and variations of intensity of both G-band and G'-band were observed, indicating the change of atomic structure and electron density of state of SWNTs. Due to the high resolution of micro-Raman spectroscopy, it is also a convenient tool to study of inter-molecular junctions in individual SWNTs. In the end of this review, the challenges and opportunities for the further application of Raman spectroscopy in the characterization of SWNTs were discussed.

Raman Spectral Measuring of the Growth Rate of Individual Single-Walled Carbon Nanotubes

Low-Temperature Raman Spectroscopy of Individual Single-Wall Carbon Nanotubes and Single-Layer Graphene

Measuring Thermal Conductivity of an Individual Carbon Nanotube Using Raman Spectroscopy

Quantitative Thermal Imaging of Single-Walled Carbon Nanotube Devices by Scanning Joule Expansion Microscopy.

Experimental observation of individual single-wall nanotube species by Raman microscopy

Temperature-mediated Growth of Single-Walled Carbon-Nanotube Intramolecular Junctions.

Controllable preparation and properties of single-/double-walled carbon nanotubes

Application of Resonance Raman Spectroscopy in the Characterization of Single-Walled Carbon Nanotubes

Raman spectroscopy of carbon nanotubes

[Raman Scattering of Single-Wall Carbon Nanotubes Produced Using Y/Ni Catalyst].

Raman Characterisation Of Individual Single Wall Nanotubes

Temperature-mediated growth of single-walled carbon-nanotube intramolecular junctions

Raman measurement of heat transfer in suspended individual carbon nanotube

(N,m) Assignments and Quantification for Single-Walled Carbon Nanotubes on SiO2/Si Substrates by Resonant Raman Spectroscopy

Raman Spectra Variation of Partially Suspended Individual Single-Walled Carbon Nanotubes

In situ measurements on individual thin carbon nanotubes using nanomanipulators inside a scanning electron microscope

Differential Multi-probe Thermal Transport Measurements of Multi-walled Carbon Nanotubes grown by Chemical Vapor Deposition

Temperature Dependence of the Raman Spectra of Single-Wall Carbon Nanotubes

Thermal Characterization of Carbon Nanotube Fiber by Time-Domain Differential Raman

Low-Temperature, Directly Depositing Individual Single-Walled Carbon Nanotubes for Fabrication of Suspended Nanotube Devices

Growth of Single-Walled Carbon Nanotubes from Discrete Catalytic Nanoparticles of Various Sizes