Optimizing of Grinding Parameters and Research of Grinding Mechanism of Reaction-bond Silicon Carbon

ZHANG Yunlong,ZHANG Yumin,HAN Jiecai,YAO Wang
DOI: https://doi.org/10.3321/j.issn:1005-023X.2007.z1.070
2007-01-01
Abstract:This paper mainly aimed at the optimizing of grinding parameters and investigating of grinding mechanism of reaction bond silicon carbide (RB-SiC). The characteristics of ground surface are explored. The effect of grinding parameters,grinding efficiency,micro-hardness on surface roughness (Ra)and on subsurface structure are analyzed. The optimization grinding parameters were determined: depth of cut of 0.47μm/s,worktable rotation speed of 2.5r/min and burnishing time of 5 min. Ground under these conditions smoother surface (Ra<100nm),good surface integrity and lower sub-surface damage can be obtained. This work also investigated grinding mechanism. The main removal mode is brittle fracture,which including crystal removal,material peel off and brittleness rupture.
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