Temperature Dependence of the Energy Relaxation Rate in an RF-SQUID Flux Qubit

Wei Qui,Yang Yu,Bo Mao,Shaoxiong Li,Siyuan Han
DOI: https://doi.org/10.1109/tasc.2009.2019658
IF: 1.9489
2009-01-01
IEEE Transactions on Applied Superconductivity
Abstract:From microwave and resonant tunneling spectroscopy measurements we independently obtained all device parameters needed to reconstruct the Hamiltonian of an RF-SQUID flux qubit. Energy relaxation of the qubit as a function of flux bias and temperature was investigated experimentally. It is found that the energy relaxation rate at different flux biases scales to a universal temperature dependence. This universal T-dependence of T1 time agrees well with a theoretical model in which the thermal equilibrium population of the excited states is considered.
What problem does this paper attempt to address?