Enhanced Luminescence of GdTaO4:Eu3+ Thin-Film Phosphors by K Doping

Xiaolin Liu,Xin Xui,Mu Gu,Lihong Xiao,Kun Han,Rui Zhang
DOI: https://doi.org/10.1016/j.apsusc.2006.09.060
IF: 6.7
2006-01-01
Applied Surface Science
Abstract:The effect of K+ ions on GdTaO4:Eu3+ thin-film phosphors was investigated in order to improve their luminescent properties. The GdTaO4:Eu0.1, Kx thin films were synthesized by sol–gel process, and characterized through measuring their microstructure and luminescence. The results indicated that photoluminescence (PL) intensity of GdTaO4:Eu3+ film was improved remarkably by K doping. There were two maxima in the curve of PL intensity against K+ dopant concentration, where one was improved up to 2.1 times at x=0.001 and the other was enhanced up to 2.7 times at x=0.05. The first maximum was regarded as the alteration of the local environment surrounding the Eu3+ activator by incorporation of K+ ions, and the second maximum was due to the flux effect. Additionally, the luminescence increased with the increase of firing temperature from 800°C to 1200°C.
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