Gas‐Phase Reaction Pathways from SiH4 to Si2H6, Si2H4 and Si2H2: A Theoretical Study

Shao-Wen Hu,Yi Wang,Xiang-Yun Wang,Ti-Wei Chu,Xin-Qi Liu

DOI: https://doi.org/10.1002/chin.200326007

2003-01-01

ChemInform

Abstract:AbstractFor Abstract see ChemInform Abstract in Full Text.

What problem does this paper attempt to address?

Thermal Methane Activation by [si2o5].+ and [si2o5h2].+: Reactivity Enhancement by Hydrogenation

Xiaoyan Sun,Shaodong Zhou,Maria Schlangen,Helmut Schwarz

DOI: https://doi.org/10.1002/anie.201607864

2016-01-01

Angewandte Chemie International Edition

Abstract:The thermal reactions of methane with the oxygenrich cluster cations [Si2O5](center dot+) and [Si2O5H2](center dot+) have been examined using Fourier transform-ion cyclotron resonance (FT-ICR) mass spectrometry in conjunction with state-of-theart quantum chemical calculations. In contrast to the inertness of [Si2O5](center dot+) towards methane, the hydrogenated cluster [Si2O5H2](center dot+) brings about hydrogen-atom transfer (HAT) from methane with an efficiency of 28% relative to the collision rate. The mechanisms of this process have been investigated in detail and the reasons for the striking reactivity difference of the two cluster ions have been revealed.
Gas Phase Reactions Between Sih4 and B2h6: A Theoretical Study

SW Hu,Y Wang,XY Wang

DOI: https://doi.org/10.1021/jp027113k

2003-01-01

Abstract:Gas-phase reactions of silane (SiH4) and diborane (B2H6) are investigated using ab initio calculations at the MP2/6-311++g** level. Initially SiH4 and B2H6 are only weakly attracted to each other. Under thermal activation, the two molecules can overcome an energy barrier of 33.87 kcal/mol to associate into a complex SiH4-BH3-BH3 with a hydrogen-bridged Si-H-B bond. Upon bonding, one of the two hydrogen-bridged bonds B-H-B in B2H6 is broken and the other becomes polarized. Started from the SiH4-BH3-BH3 complex, three comparable fragmentation pathways involving BH3 and H-2 elimination produce several silaboranes with various silicon-boron-hydrogen ratios. A much higher barrier exists between the initial loosely bonded SiH4-B2H6 system and a direct H-2 elimination product SiH3-B2H5 with C-s symmetry. The bonding nature in, the species are further elucidated through topological analysis of electron density using the AIM theory. These intermediate silaboranes are possible precursors for chemical vapor deposition in fabricating boron doped silicon films. Their composition and polarity may determine their tendency of surface adsorption and the properties of the relevant solid. The proposed mechanisms can help to understand and control the initial gas-phase reactions in practice. Calculated IR spectra, dipole moment, and rotational constants of the species are provided to facilitate experimental investigations.
The Mechanism and Kinetic Analysis of C4h4 + C4h4 (But-1-ene-3-yne) Reaction with Features of H-Transfer in Combustion

Peng Liu,He Lin,Zhenwu He,Yiran Zhang,Bin Guan,Zhen Huang

DOI: https://doi.org/10.1016/j.ijhydene.2015.12.038

IF: 7.2

2016-01-01

International Journal of Hydrogen Energy

Abstract:Detailed mechanisms of C4H4 + C4H4 reaction were investigated by accurate ab initio density functional theory B3LYP/6-311 + G(d,p) calculations, as well as CBS-QB3 calculations. It was found that styrene, phenylacetylene and 5-membered ring structure can be formed in C4H4 + C4H4 reaction through five parallel and competing pathways. Three pathways are featured with H-transfer and dehydrogenation reactions, and the other two pathways are characterized with the forming and breaking of C-C bond. The H-transfer reactions play a vital role in stabilizing intermediates. It was found that the H-transfer reaction is significantly dependent on the relative position of two C atoms, the degree of saturation of the second C atom, and the electronic environment of molecule. Generally, an ortho-position unsaturated C atom with relative small positive atomic charge is preferable in H-transfer reaction. The yield of products and reaction rate coefficients were evaluated by using Rice-Ramsperger-Kassel-Marcus theory with solving master equation at different combustion temperatures and pressures (T = 800-2500 K, P = 0.1-10 atm). The kinetic results indicate that styrene is the dominant product and the formation of other two products can be ignored when temperature is lower than 1600 K. The formations of phenylacetylene and 5-membered ring structure are only facilitated at higher temperature, but dependent on the combustion pressure. Specifically, phenylacetylene is favored by higher pressure and higher temperature, while 5-membered ring structure is favored by lower pressure and higher temperature. Copyright (C) 2015, Hydrogen Energy Publications, LLC. Published by Elsevier Ltd. All rights reserved.
Gas-Phase Reactions Between Silane and Ammonia: A Theoretical Study

SW Hu,Y Wang,XY Wang,TW Chu,XQ Liu

DOI: https://doi.org/10.1021/jp035684m

2003-01-01

The Journal of Physical Chemistry A

Abstract:Gas-phase reactions between silane (SiH4) and ammonia (NH3) were investigated using ab initio calculations at the CCSD(T)/6-311++g**//MP2/6-31+G* level. Within the energy range of 180 kcal/mol, we located 34 equilibrium and 23 transition states on the potential energy surfaces of the Si-N-H systems. The initially weakly bonded molecular complex H3N-SiH4 eliminates the first hydrogen molecule (H-2) to form the Si-N bond three ways. The first route is through a dihydrogen-bonded transition state, over a barrier of 49.31 kcal/mol, leading directly to the most stable product silylamine (H2N-SiH3). The second route is through SiH4 dissociating into SiH2 and H-2, over a barrier of 57.47 kcal/mol, leading to the dative-bonded silylammonia complex H3N-SiH2. The third route is through a stepwise atomic dissociation and radical formation process, over a barrier of 131.21 kcal/mol, also leading to H3N-SiH2. With more energy, both H2N-SiH3 and H3NSiH2 are liable to further H2 or H elimination, leading to smaller species including molecules H2N-SiH, HN-SiH2, H3N-Si, HNSi, and HSiN and radicals H2N-SiH2, H3N-SiH, H2N-Si, and NSi. Dihydrogenbonded structures are also responsible for lowering barriers in these processes.
Mechanistic aspects of gas-phase hydrogen-atom transfer from methane to [CO](·+) and [SiO](·+) : why do they differ?

Nicolas Dietl,Anna Troiani,Maria Schlangen,Ornella Ursini,Giancarlo Angelini,Yitzhak Apeloig,Giulia de Petris,Helmut Schwarz

DOI: https://doi.org/10.1002/chem.201204157

2013-05-17

Chemistry

Abstract:The reactivity of the two diatomic congeneric systems [CO](·+) and [SiO](·+) towards methane has been investigated by means of mass spectrometry and quantum-chemical calculations. While [CO](·+) gives rise to three different reaction channels, [SiO](·+) reacts only by hydrogen-atom transfer (HAT) from methane under thermal conditions. A theoretical analysis of the respective HAT processes reveals two distinctly different mechanistic pathways for [CO](·+) and [SiO](·+), and a comparison to the higher metal oxides of Group 14 emphasizes the particular role of carbon as a second-row p element.
Infrared and ab initio studies of molecules containing SiH bondsPart I. A correlation between vis(SiH) and re (SiH)

D. C. McKean,I. Torto,James E. Boggs,Kangnian Fan

DOI: https://doi.org/10.1016/0166-1280(92)87033-V

1992-01-01

Abstract:Isolated SiH stretching frequencies vis(SiH) are reported for the species SiHDX2 (X = F or Cl), SiHD2NMe2, SiHD2OMe, (SiHD2NMe and (SiHD2)2S. IR spectra in the gas and solid phases are also shown for CHD2OSiH3. Splittings of vas(CH3) in (CH3)2)SiH2 and (CH3)3 SiH are reported, from which vis(CH) values are deduced. Evidence for the structures of these molecules is discussed. Ab initio structures have been determined using a 4–21G/3-3-21G basis set for the above molecules, and for SiH4, SiH3F, SiHF3, SiH3Cl, SiHCl3, SiH3Me, SiH2Me2, SiHMe3, SiH3CN, SiH3CCH, SiH3SiH3, SiH3CH2CH3, SiH3CH3Cl, SiH3CHCH2 and CH3CH2CH3. The re(SiH) and re(CH) values are tabulated. A good correlation is found between vis(SiH) and re(SiH)
Infrared and Ab Initio Studies of Molecules Containing SiH Bonds

D.C. McKean,I. Torto,James E. Boggs,Kangnian Fan

DOI: https://doi.org/10.1016/0166-1280(92)87033-v

1992-01-01

Journal of Molecular Structure THEOCHEM

Abstract:Isolated SiH stretching frequencies vis(SiH) are reported for the species SiHDX2 (X = F or Cl), SiHD2NMe2, SiHD2OMe, (SiHD2NMe and (SiHD2)2S. IR spectra in the gas and solid phases are also shown for CHD2OSiH3. Splittings of vas(CH3) in (CH3)2)SiH2 and (CH3)3 SiH are reported, from which vis(CH) values are deduced. Evidence for the structures of these molecules is discussed. Ab initio structures have been determined using a 4–21G/3-3-21G basis set for the above molecules, and for SiH4, SiH3F, SiHF3, SiH3Cl, SiHCl3, SiH3Me, SiH2Me2, SiHMe3, SiH3CN, SiH3CCH, SiH3SiH3, SiH3CH2CH3, SiH3CH3Cl, SiH3CHCH2 and CH3CH2CH3. The re(SiH) and re(CH) values are tabulated. A good correlation is found between vis(SiH) and re(SiH) re(SiH)(Å) = 1.9089 − 1.998 × 10−4vis (SiH) (cm−1) Plots for SiH2Cl2, and SiHCl3 reveal large anomalies, but SiH3CN and SiH3CCH behave normally. Results are compared with similar ones for CH bonds. The CH bond length asymmetry in Me2SiH2 and Me3SiH revealed by the vas(CH3) splittings is confirmed by the ab initio calculations. The effect of conformation on the β effect of methyl on SiH and CH bonds is explored.
Theoretical Investigations for Kinetics of the Chemical Reactions: H + SiClx (x = 1, 2, 3).

Jianxun Zhang,Quan Zhu,Jun Li

DOI: https://doi.org/10.1021/acs.jpca.2c00390

2022-01-01

The Journal of Physical Chemistry A

Abstract:Hydrogen atoms and SiClx (x = 1, 2, 3) radicals coexist during the hydrogenation of silicon tetrachloride (STC, SiCl4), an important process in the fabrication of industrial polysilicon. In this work, the mechanisms and kinetics of the reactions between H and SiClx (x = 1, 2, 3) were studied by theory. The structures and vibrational frequencies of reactants, products, intermediates, and transition states (TSs) were determined at the B2PLYP/may-cc-pVTZ level. The single-point energies of minima and saddle points were refined using the coupled-cluster single-double with triple perturbative (CCSD(T)) with the complete basis set extrapolation method. Some special treatments were designed to obtain reliable wave functions for unimolecular reactions without tight TSs by the density functional theory. Subsequently, Lennard-Jones (L-J) parameters between each intermediate (SiHClx) and bath gas (He) were obtained at the MP2/jul-cc-pVTZ level to derive reliable temperature- and pressure-dependent rate coefficients for unimolecular reactions according to the variational Rice-Ramsperger-Kassel-Marcus theory. For bimolecular reactions, rate coefficients were determined by the variational transition-state theory. The rate coefficients of barrierless reactions were derived based on the loose TSs with the maximum free energy. Finally, the master equation analysis was used to investigate the variation of the rate coefficients with pressure and temperature in the activated paths.
A Possible Additional Formation Pathway for the Interstellar Diatomic SiS

Ryan C. Fortenberry,Brett A. McGuire

2024-05-20

Abstract:The formation of silicon monosulfide (SiS) in space appears to be a difficult process, but the present work is showing that a previously excluded pathway may contribute to its astronomical abundance. Reaction of the radicals SH + SiH produces SiS with a submerged transition state and generates a stabilizing H$_2$ molecule as a product to dissipate the kinetic energy. Such is a textbook chemical reaction for favorable gas-phase chemistry. While previously proposed mechanisms reacting atomic sulfur and silicon with SiH, SH, and H$_2$S will still be major contributors to the production of SiS, an abundance of SiS in certain regions could be a marker for the presence of SiH where it has previously been unobserved. These quantum chemically-computed reaction profiles imply that the silicon-chalcogen chemistry of molecular clouds, shocked regions, or protoplanetary disks may be richer than previously thought. Quantum chemical spectral data for the intermediate cis- and trans-HSiSH are also provided in order to aid in their potential spectroscopic characterization.

Astrophysics of Galaxies
Directed Gas Phase Formation of Silene (H2 SiCH2 )

Zhenghai Yang,Srinivas Doddipatla,Chao He,Vladislav S Krasnoukhov,Valeriy N Azyazov,Alexander M Mebel,Ralf I Kaiser

DOI: https://doi.org/10.1002/chem.202002359

2020-10-27

Chemistry

Abstract:The silene molecule (H2 SiCH2 ; X1 A1 ) has been synthesized under single collision conditions via the bimolecular gas phase reaction of ground state methylidyne radicals (CH) with silane (SiH4 ). Exploiting crossed molecular beams experiments augmented by high-level electronic structure calculations, the elementary reaction commenced on the doublet surface through a barrierless insertion of the methylidyne radical into a silicon-hydrogen bond forming the silylmethyl (CH2 SiH3 ; X2 A') complex followed by hydrogen migration to the methylsilyl radical (SiH2 CH3 ; X2 A'). Both silylmethyl and methylsilyl intermediates undergo unimolecular hydrogen loss to silene (H2 SiCH2 ; X1 A1 ). The exploration of the elementary reaction of methylidyne with silane delivers a unique view at the widely uncharted reaction dynamics and isomerization processes of the carbon-silicon system in the gas phase, which are noticeably different from those of the isovalent carbon system thus contributing to our knowledge on carbon silicon bond couplings at the molecular level.
Identification of Decomposition Reactions Forhmdsoorganosilicon Using Quantum Chemical Calculations

Yaosong Huang,Yugong Chen,Mingfei Zhou

DOI: https://doi.org/10.1002/qua.26415

2020-01-01

International Journal of Quantum Chemistry

Abstract:Hexamethyldisiloxane [HMDSO, (CH3)(3)-SiOSi-(CH3)(3)] is an important precursor for SiO(2)formation during flame-based silica material synthesis. As a result, HMDSO reactions in flame have been widely investigated experimentally, and many results have indicated that HMDSO decomposition reactions occur very early in this process. In this paper, quantum chemical calculations are performed to identify the initial decomposition of HMDSO and its subsequent reactions using the density functional theory at the level of B3LYP/6-311+G (d, p). Four reaction pathways-(a) Si-O bond dissociation of HMDSO, (b) Si-C bond dissociation of HMDSO, (c) dissociation and recombination of Si-O and Si-C bonds, and (d) elimination of a methane molecule from HMDSO-have been examined and identified. From the results, it is found that the barrier of 84.38 kcal/mol and Si-O bond dissociation energy of 21.55 kcal/mol are required for the initial decomposition reaction of HMDSO in the first pathway, but the highest free energy barrier (100.69 kcal/mol) is found in the third reaction pathway. By comparing the free energy barriers and reaction rate constants, it is concluded that the most possible initial decomposition reaction of HMDSO is to eliminate the CH(3)radical by Si-C bond dissociation.
Theoretical Investigation on H-Abstraction Reactions of Silanes with H and CH 3 Attacking: A Comparative Study with Alkane Counterparts

Qilong Fang,Yan Zhang,Jingxian Xia,Yuyang Li

DOI: https://doi.org/10.1021/acsomega.1c07031

IF: 4.1

2022-02-02

ACS Omega

Abstract:Silicon-based organic precursors are widely applied in the vapor-fed flame synthesis of monocrystalline silicon, silicon dioxide, and silicon nitride. Due to the lack of kinetic investigations on reactions of silicon-based organic precursors, rate constants were usually analogized to those of their hydrocarbon counterparts. Investigations on the similarities and differences between the two types of compounds become necessary. This work reports a comparative theoretical investigation on H-abstraction reactions with H and CH3 attacking for silanes and their alkane counterparts, including silane and methane, disilane, methylsilane and ethane, dimethylsilane and propane, trimethylsilane and iso-butane, and tetramethylsilane and neo-pentane at the domain-based local pair natural orbital coupled cluster with perturbative triple excitations (DLPNO-CCSD(T))/cc-pVTZ//M06–2X/cc-pVTZ level. The rate constants were calculated using the conventional transition-state theory coupled with the asymmetric Eckart tunneling corrections over 600–2000 K. The calculated results show that dramatic discrepancies exist between H-abstraction from silicon sites in silanes and equivalent carbon sites in their alkane counterparts with H and CH3 attacking. The H-abstraction reactions from the primary carbon sites in silanes have generally lower barrier energies than the similar reactions in their alkane counterparts, while those in methylsilane and dimethylsilane with H attacking are the only two with higher barrier energies. Electrostatic potential mapped molecular van der Waals surfaces were adopted to provide insight into the calculated trends in barrier energies. The H-abstraction reactions from silicon sites in silanes have much higher rate constants than those from equivalent carbon sites in their alkane counterparts, especially under low-temperature conditions, while the rate constants of H-abstraction reactions from primary carbon sites in silanes and their alkane counterparts show relatively strong analogy.This article has not yet been cited by other publications.

chemistry, multidisciplinary
An ab initio dynamic study of H2COH -->H3CO and SiH4-->SiH2+H2 reactions

E. Türkkan,Ayhan Özmen,Esma Eryilmaz

2016-04-02

Abstract:Ab initio calculations have been performed for a doublet H 2 COH --> H 3 CO and a singlet system of SiH 4 -->H 2 +H 2 reactions. Geometry optimization including frequency analysis have been accomplished at the HF/6-31G(d) level of theory for reactants, transition states (TS), and products of the reactions studied. The physico-chemical properties of the compounds including zero-point energy, multiplicity, dipole moment, and point group symmetries have been calculated at the same level of theory. Upon obtaining TS geometry, the reaction paths following for the reactions have been generated with the IRC keyword and the TS structures have been confirmed to belong to the reactions desired. The activation energies and the formation of reaction have been calculated by using the total energy graph along the IRC reaction coordinate. The reaction paths generated by the program exhibit the exothermic/endothermic characteristics of the reactions.

Chemistry
Gas-phase kinetics of chlorosilylene reactions. I. ClSiH + Me3SiH: absolute rate measurements and theoretical calculations for prototype Si-H insertion reactions

Rosa Becerra,Sergey E Boganov,Mikhail P Egorov,Valery I Faustov,Irina V Krylova,Oleg M Nefedov,Vladimir M Promyslov,Robin Walsh

DOI: https://doi.org/10.1021/jp901446t

2009-05-14

Abstract:Time-resolved studies of chlorosilylene, ClSiH, generated by the 193 nm laser flash photolysis of 1-chloro-1-silacyclopent-3-ene, have been carried out to obtain rate constants for its bimolecular reaction with trimethylsilane, Me(3)SiH, in the gas phase. The reaction was studied at total pressures up to 100 torr (with and without added SF(6)) over the temperature range 297-407 K. The rate constants were found to be pressure independent and gave the following Arrhenius equation: log(k/cm(3) molecule(-1) s(-1)) = (-13.97 +/- 0.25) + (12.57 +/- 1.64) kJ mol(-1)/RT ln 10. The Arrhenius parameters are consistent with a mechanism involving an intermediate complex, whose rearrangement is the rate-determining step. Quantum chemical calculations of the potential energy surface for this reaction and also the reactions of ClSiH with SiH(4) and the other methylsilanes support this conclusion. Comparisons of both experiment and theory with the analogous Si-H insertion processes of SiH(2) and SiMe(2) show that the main factor causing the lower reactivity of ClSiH is the secondary energy barrier. The calculations also show the existence of a novel intramolecular H-atom exchange process in the complex of ClSiH with MeSiH(3).
Ab initio chemical kinetics for SiH2 + Si2H6 and SiH3 + Si2H5 reactions and the related unimolecular decomposition of Si3H8 under a-Si/H CVD conditions

P Raghunath,M C Lin

DOI: https://doi.org/10.1021/jp407553a

2013-10-24

Abstract:The kinetics and mechanisms for SiH2 + Si2H6 and SiH3 + Si2H5 reactions and the related unimolecular decomposition of Si3H8 have been investigated by ab initio molecular orbital theory based on the QCISD(T)/CBS//QCISD/6-311++G(d,p) method in conjunction with quantum statistical variational Rice-Ramsperger-Kassel-Marcus (RRKM) calculations. For the barrierless radical association processes, their variational transition states have been characterized by the CASPT2//CASSCF method. The species involved in the study are known to coexist under CVD conditions. The results show that the association reaction of SiH2 and Si2H6 producing Si3H8 occurs by insertion via its lowest-energy path forming a loose hydrogen-bonding molecular complex with 8.3 kcal/mol binding energy; the reaction is exothermic by 55.0 kcal/mol. The chemically activated Si3H8 adduct can fragment by several paths, producing SiH4 + SiH3SiH (-0.7 kcal/mol), Si(SiH3)2 + H2 (-1.4 kcal/mol), and SiH3SiH2SiH + H2 (-1.4 kcal/mol). The predicted enthalpy changes as given agree well with available thermochemical data. Three other decomposition channels of Si3H8 occurring by Si-H or Si-Si breaking were found to be highly endothermic, and the reactions take place without a well-defined barrier. The heats of formation of Si3H8, SiH2SiH, Si2H4, i-Si3H7, n-Si3H7, Si(SiH3)2, and SiH3SiH2SiH have been predicted and found to be in close agreement with those available data in the literature. The product branching rate constants for SiH2 + Si2H6 and SiH3 + Si2H5 reactions and the thermal unimolecular decomposition of Si3H8 for all low-energy paths have been calculated with multichannel variational RRKM theory covering varying P,T conditions typically employed in PECVD and Cat-CVD processes for hydrogenated amorphous silicon (a-Si/H) film growth. The results were also found to be in good agreement with available kinetic data. Our kinetic results may be employed to model and control very large-area a-Si/H film growth for a new generation of solar cell applications.
Ab Initio and Topological Study of Interactions Between SiH4-nXn(n= 0−3, X = F and Cl) and BH3

SW Hu,XY Wang

DOI: https://doi.org/10.1021/jp0260292

2002-01-01

Abstract:Theoretically, silane and its derivatives (SiH4-nXn, n = 0-3, X = F and CI) are found to form hydrogen-bridged complex with borane (BH3) at gas phase. High level ab initio calculations at the MP2/aug-cc-pVTZ level show that the interaction energies (D-e) between SiH4-nXn and BH3 are -6.43 similar to -12.06 kcal/mol corrected by zero-point energy and the basis set superposition error, whereas without the corrections, the D-e values are - 14.73 similar to -21.65 kcal/mol. The SiH4-nXn-BH3 Complexes can be regarded as analogues of B2H6 with one monomer BH3 replaced by SiH4-nXn although only one bridged bond Si-H-B is definitely located via topological analyses of the electron density. Upon bonding, boron becomes four coordinated by receiving a hydrogen atom from SiH4-nXn. In contrast to the compact hydrogen-bridged complexes, the electron donor-acceptor conformers with a bridged halogen atom are only loosely bound (D-e < 2 kcal/mol). The results indicate that BH3 is a better hydrogen attractor in these interactions. The predicted SiH4-nXn-BH3 complexation and hydrogen transfer from SiH4-nXn to BH3 may help to understand the initial stage reactions in producing boron doped Silicon films by chemical vapor deposition.
High-Level Systematic Ab Initio Comparison of Carbon- and Silicon-Centered SN2 Reactions

Attila Á Dékány,Gyula Z Kovács,Gábor Czakó

DOI: https://doi.org/10.1021/acs.jpca.1c07574

2021-11-11

Abstract:We characterize the stationary points along the Walden inversion, front-side attack, and double-inversion pathways of the X- + CH3Y and X- + SiH3Y [X, Y = F, Cl, Br, I] SN2 reactions using chemically accurate CCSD(T)-F12b/aug-cc-pVnZ [n = D, T, Q] levels of theory. At the carbon center, Walden inversion dominates and proceeds via prereaction (X-···H3CY) and postreaction (XCH3···Y-) ion-dipole wells separated by a usually submerged transition state (X-H3C-Y)-, front-side attack occurs over high barriers, double inversion is the lowest-energy retention pathway for X = F, and hydrogen- (F-···HCH2Y) and halogen-bonded (X-···YCH3) complexes exist in the entrance channel. At the silicon center, Walden inversion proceeds through a single minimum (X-SiH3-Y)-, the front-side attack is competitive via a usually submerged transition state separating pre- and postreaction minima having X-Si-Y angles close to 90°, double inversion occurs over positive, often high barriers, and hydrogen- and halogen-bonded complexes are not found. In addition to the SN2 channels (Y- + CH3X/SiH3X), we report reaction enthalpies for proton abstraction (HX + CH2Y-/SiH2Y-), hydride substitution (H- + CH2XY/SiH2XY), XH···Y- complex formation (XH···Y- + 1CH2/1SiH2), and halogen abstraction (XY + CH3-/SiH3- and XY- + CH3/SiH3).
Deciphering Dynamics of the Cl + SiH 4 → H + SiH 3 Cl Reaction on a Machine Learning Made Globally Accurate Full-Dimensional Potential Energy Surface.

Xiaohu Xu,Jun Li

DOI: https://doi.org/10.1021/acs.jpca.2c05417

2022-01-01

Abstract:Chemical reaction dynamics needs the joint effort from both experiment and theory, and theory is useful to rationalize the experimental results by offering intimate details of chemical reaction dynamics and to explore new reaction pathways. With the aid of machine learning, we develop here an accurate full-dimensional potential energy surface (PES) for the reaction between Cl + SiH. This PES can describe well the hydrogen abstraction channel to HCl + SiH. It can also give a good description for the hydrogen substitution channel to H + SiHCl, which is the focus of the current study and has never been reported by theory. The dynamics of this substitution channel is revealed in detail by calculating ample quasi-classical trajectories (QCTs) on the new PES. The computed product angular distributions are in good agreement with the only crossed molecular beam experiment. Both theory and experiment suggest that this channel takes place mainly via the typical S2 inversion mechanism. Theory reveals that there also exists a novel torsion mechanism for the substitution channel. Two dynamic mechanisms are analyzed in detail. The present detailed theoretical dynamics study sheds insightful and novel understanding for this fundamentally important chemical reaction.
Gas-phase preparation of silylacetylene (SiH 3 CCH) through a counterintuitive ethynyl radical (C 2 H) insertion

Shane J. Goettl,Allen Vincent,Mateus X. Silva,Zhenghai Yang,Breno R. L. Galvão,Rui Sun,Ralf I. Kaiser

DOI: https://doi.org/10.1126/sciadv.adq5018

IF: 13.6

2024-11-18

Science Advances

Abstract:Elementary reaction mechanisms constitute a fundamental infrastructure for chemical processes as a whole. However, while these mechanisms are well understood for second-period elements, involving those of the third period and beyond can introduce unorthodox reactivity. Combining crossed molecular beam experiments with electronic structure calculations and molecular dynamics simulations, we provide compelling evidence on an exotic insertion of an unsaturated sigma doublet radical into a silicon-hydrogen bond as observed in the barrierless gas-phase reaction of the D1-ethynyl radical (C 2 D) with silane (SiH 4 ). This pathway, which leads to the D1-silylacetylene (SiH 3 CCD) product via atomic hydrogen loss, challenges the prerequisite and fundamental concept that two reactive electrons and an empty orbital are required for the open shell, unsaturated radical reactant to insert into a single bond.

multidisciplinary sciences
Current Status of the High-Temperature Kinetic Models of Silane: Part I. Pyrolysis

Karl P. Chatelain,Yizhuo He,Sandra Javoy,Remy Mevel,Eric L. Petersen,Deanna A. Lacoste

DOI: https://doi.org/10.1016/j.combustflame.2020.11.030

IF: 4.4

2021-01-01

Combustion and Flame

Abstract:The present work compares the performance of seven reaction models with respect to a large experimental dataset relevant to the high-temperature pyrolysis of both silane (SiH4) and disilane (Si2H6). Their performances were established based on different validation criteria that account for the shape and the amplitude of the validation profile. Then, the model performances were quantified with a global error, which accounts for the experimental uncertainties. The most satisfactory model has a global error as low as 3.1 (i.e., meaning 3.1 times higher than the experimental uncertainty) and the highest fraction (74%) of criteria with a low error (<2), while most of the models have large discrepancies with the validation dataset, global error near 8 and up to 110 for the less accurate model. The origins of these discrepancies are identified with reaction pathway and sensitivity analyses. Among the seven tested model, three main decomposition pathways are evidenced, including one more specific to the models presenting the lowest errors. Based on the global error values, the ability to reproduce all the experimental conditions, and the model analyses, the reaction pathways relevant to the high-temperature pyrolysis of silane and disilane are determined. In addition, the present study provides experimental and numerical guidance for the future developments of silicon hydride reaction models. The limited performance of most of the oldest reaction models may have a significant impact on our current understanding of the pyrolysis and oxidation kinetics of silane.

Gas‐Phase Reaction Pathways from SiH4 to Si2H6, Si2H4 and Si2H2: A Theoretical Study

Thermal Methane Activation by [si2o5].+ and [si2o5h2].+: Reactivity Enhancement by Hydrogenation

Gas Phase Reactions Between Sih4 and B2h6: A Theoretical Study

The Mechanism and Kinetic Analysis of C4h4 + C4h4 (But-1-ene-3-yne) Reaction with Features of H-Transfer in Combustion

Gas-Phase Reactions Between Silane and Ammonia: A Theoretical Study

Mechanistic aspects of gas-phase hydrogen-atom transfer from methane to [CO](·+) and [SiO](·+) : why do they differ?

Infrared and ab initio studies of molecules containing SiH bondsPart I. A correlation between vis(SiH) and re (SiH)

Infrared and Ab Initio Studies of Molecules Containing SiH Bonds

Theoretical Investigations for Kinetics of the Chemical Reactions: H + SiClx (x = 1, 2, 3).

A Possible Additional Formation Pathway for the Interstellar Diatomic SiS

Directed Gas Phase Formation of Silene (H2 SiCH2 )

Identification of Decomposition Reactions Forhmdsoorganosilicon Using Quantum Chemical Calculations

Theoretical Investigation on H-Abstraction Reactions of Silanes with H and CH 3 Attacking: A Comparative Study with Alkane Counterparts

An ab initio dynamic study of H2COH -->H3CO and SiH4-->SiH2+H2 reactions

Gas-phase kinetics of chlorosilylene reactions. I. ClSiH + Me3SiH: absolute rate measurements and theoretical calculations for prototype Si-H insertion reactions

Ab initio chemical kinetics for SiH2 + Si2H6 and SiH3 + Si2H5 reactions and the related unimolecular decomposition of Si3H8 under a-Si/H CVD conditions

Ab Initio and Topological Study of Interactions Between SiH4-nXn(n= 0−3, X = F and Cl) and BH3

High-Level Systematic Ab Initio Comparison of Carbon- and Silicon-Centered SN2 Reactions

Deciphering Dynamics of the Cl + SiH 4 → H + SiH 3 Cl Reaction on a Machine Learning Made Globally Accurate Full-Dimensional Potential Energy Surface.

Gas-phase preparation of silylacetylene (SiH 3 CCH) through a counterintuitive ethynyl radical (C 2 H) insertion

Current Status of the High-Temperature Kinetic Models of Silane: Part I. Pyrolysis