Abstract:In this work, we discovered a very efficient method of crystallization of thermally evaporated rubrene, resulting in ultrathin, large-area, fully connected, and highly crystalline thin films of this organic semiconductor with a grain size of up to 500 mu m and charge carrier mobility of up to 3.5 cm(2) V-1 s(-1). We found that it is critical to use a 5 nm-thick organic underlayer on which a thin film of amorphous rubrene is evaporated and then annealed to dramatically influence the ability of rubrene to crystallize. The underlayer property that controls this influence is the glass transition temperature. By experimenting with different underlayers with glass transition temperatures varying over 120 degrees C, we identified the molecules leading to the best crystallinity of rubrene films and explained why values both above and below the optimum result in poor crystallinity. We discuss the formation of different crystalline morphologies of rubrene produced by this method and show that field-effect transistors made with films of a single-domain platelet morphology, achieved through the aid of the optimal underlayer, outperform their spherulite counterparts with a nearly four times higher charge carrier mobility. This large-area crystallization technique overcomes the fabrication bottleneck of high-mobility rubrene thin film transistors and other related devices and, given its scalability and patternability, may lead to practical technologies compatible with large-area flexible electronics.

Homoepitaxy Growth of Well-Ordered Rubrene Thin Films

Tailoring the optical properties of rubrene films through epitaxy-induced amorphous-to-crystal transition

Substrate Induced Molecular Conformations in Rubrene Thin Films: A Thickness Dependent Study

Morphology and transport characterization of solution-processed rubrene thin films on polymer-modified substrates

Morphology and structural properties of thin rubrene crystallites grown on graphite

Use of an Underlayer for Large Area Crystallization of Rubrene Thin Films

Morphology and fluorescence spectra of rubrene single crystals grown by physical vapor transport

Epitaxial Growth of Ultrathin Two-Dimensional Pentacene Film with Standing-Up Molecular Geometry on Nano-Size-curved Graphene Surface

Abnormal Growth Kinetics Of H-Bn Epitaxial Monolayer On Ru(0001) Enhanced By Subsurface Ar Species

Molecular Beam Epitaxy Of Highly Crystalline Monolayer Molybdenum Disulfide On Hexagonal Boron Nitride

Quasi-Homoepitaxial Junction of Organic Semiconductors: A Structurally Seamless but Electronically Abrupt Interface between Rubrene and Bis(trifluoromethyl)dimethylrubrene

Role of molecular conformations in rubrene polycrystalline films growth from vacuum deposition at various substrate temperatures

The Ordered Thin-Film Growth of Organic Semiconductor on Ag(110).

Perylene Monolayer on the Ru(0001) Surface

Optical properties of rubrene thin film prepared by thermal evaporation

Epitaxial Growth of Ultrathin ZrO2(111) Films on Pt(111)

Study On The Growth Of Crystalline Er2o3 Films On Si Substrates By Rheed Patterns

The growth of Si overlayers on Er2O3 (111)/Si (111) by solid phase epitaxy

Two-stage growth for highly ordered epitaxial C$_{60}$ films on Au(111)

Micro-spacing in-air sublimation of submillimeter-scaled rubrene nanoribbons and nanosheets for efficient optical waveguides

Atomically flat reconstructed rutile TiO2(001) surfaces for oxide film growth