Fabrication of ZnO Nanorod Array-Based Photodetector with High Sensitivity to Ultraviolet

Yingying Li,Xiang Dong,Chuanwei Cheng,Xuechao Zho,Peigen Zhang,Junshan Gao,Haiqian Zhang

DOI: https://doi.org/10.1016/j.physb.2009.08.011

IF: 2.988

2009-01-01

Physica B Condensed Matter

Abstract:Large scale densely packed and vertically oriented ZnO nanorod arrays were grown on F-doped SnO2 (FTO) substrates through a simple hydrothermal synthesis route. Based on the arrays of hexagonal ZnO nanorod with size of 60∼100nm in diameter, and ∼1.5μm in length, a prototypical photoelectrical device was fabricated for ultraviolet detection, showing good reproducibility and a large photocurrent of around 6.71mA at the applied voltage of 0.4V. The large photocurrent and the ohmic I–V characteristics of the ZnO nanorods under the illumination could be ascribed to the decrease of the barrier height among the ZnO nanorods and the Schottky barrier between the nanorods and the Au electrodes and, in particular, to the accumulation of conduction electrons, resulted from the neutralization between photogenerated holes and negatively charged oxygen ions. The photoresponse curve is well fitted to an exponential curve with the relaxation time constant of 9s in rising edge and 90s in decaying one, representing the accumulation of conduction electrons. These well-aligned ZnO nanostructures of high quality could be easily fabricated by a cost-effective chemical route and used for constructing nanoscale devices with excellent performances.