Abstract:AbstractThese proceedings contain the contributions of the 3rd Sino–German Symposium “The Silicon Age: Silicon for Microelectronics, Photonics and Photovoltaics”, which was held from 9 to 14 June 2008 in the HNA Hotel, Hangzhou, P.R. China. Nearly 30 scientists from Germany and China were invited to present their views about different aspects of silicon.In the silicon age, microelectronics has driven the high‐speed development of economy, science and technology in the world during the last century and affects now every aspect of our life. Solar cells based on crystalline Si are expected to cover more than 10% of the worldwide energy consumption in a few decades. Furthermore, there are intensive research activities regarding Si‐based photonics, including on‐chip integration of photonics in CMOS IC technology. In addition, new areas being connected with silicon are starting to appear, such as electrical biochips, micro‐opto‐electro‐mechanics or nanotechnology and nanoelectronics. Silicon, one can reasonably argue, is the most intensively studied solid element of all materials in the world. However, there is still a need for continuation of research and development regarding numerous aspects of Si, which are the field of work of many laboratories all over the world. Examples for such ‘hot’ areas are larger Si crystals/wafers, SiGe hetrostructures for high speed devices, Si‐based light emitters, application of Si in new micro‐opto‐electro‐mechanic devices etc.During the 3rd Sino–German symposium, the progress regarding crystalline silicon materials in different areas has been discussed. German and Chinese scientists from universities and research institutes presented their views about the various facets of silicon materials. The symposium provided a forum for a fruitful, intensive and open communication allowing the participants to build up or intensify relationships for a close cooperation in future.We would like to thank all participants of the symposium for their contributions and the Sino–German Science Centre in Beijing for the financial support of the symposium.October 2008

The Current Research and Development Trend of Metal Silicon

Advancing in Research of One-dimensional Silicon Nano-materials

Metal Silicides in Cmos Technology: Past, Present, and Future Trends

Current Status and Development Prospect for SiCp/Al Metal-Matrix Composites for Electronic Packaging

Preface: Phys. Status Solidi C 6/3

Metal Silicides In Advanced Complementary Metal-Oxide-Semiconductor (Cmos) Technology

Research and Development Status of Silicon Materials for Solar Cell

Principle and Research Progress on Preparation Solar Grade(SoG)Silicon by Metallurgical Route

The Current State and Trend of Metal Matrix Composites

Research Progress and Prospect of Metal Matrix Composite Materials

Overview of progress of liquid metal applications in nanomaterials, flexible electronics and new energy

Preparation Methods and Research Status of Metal Matrix Surface Composite

Recent Progress of Black Silicon: From Fabrications to Applications

Recent Development in Liquid Metal Materials

PROGRESS IN ANTI-CORROSIVE TREATMENT OF METALS BY SILANIZATION

Overview of research on machining mechanism of aluminum-based silicon carbide composites (SiCp/Al)

Synthesis and Property of One-Dimensional Metal/Semiconductor Heterojunction Nanomaterials

Advances in Research of Silica Sol Coatings on Metals

Refractory Metal and Its Preparation

Current Research Situation of Nanomaterial Preparation and Its Developing Trend

The Prospect of Advanced Material Science and Applications