Abstract:With the feature size shrinking, traditional electronic design methodologies face some bottlenecks such as per wafer cost, large interconnect delay, and high leakage power. Threedimensional integration circuit (3D IC) has been regarded as a promising solution to mitigate these problems. 3D ICs stack separate tiers in the vertical direction and connect them using vertical connections such as Through-Silicon-Vias (TSVs). Compared with traditional 2D integration, the 3D technology can provide many benefits such as reduction in the interconnect wire length, improvement of memory bandwidth, and support for realization of heterogeneous integration [1]. 3D power delivery network (PDN) is the basic support system for 3D ICs, which includes the power/ground (P/G) networks, the vertical interconnects, and the package (shown in Figure 1). In 3D PDNs, P/G TSVs connect the P/G networks in different tiers, and the bottommost tier is connected to the package through metal bumps and then routed to the voltage sources on the PCB board. The design of a 3D PDN is much more complex than the design of a 2D power network [2] and considered as one of the most critical challenges in IC design. As power coupling between different tiers becomes tighter and multiple tiers are stacked together into small footprints, delivering current to all parts of the 3D IC becomes highly challenging. An irrational PDN design may result in low supply voltage levels in the grid, i.e. large IR-drop, and thus increase the gate delay, lead to timing violations and harm the functionality of circuits [3]. To design a PDN, suitable simulation approaches are necessary. However, PDN analysis is usually a time and resource consuming task since there are millions of nodes in most mesh-based PDNs. The simulation problem becomes tougher in 3D cases as the network scale may be several times larger than that of 2D cases. Nevertheless, most existing studies tend to regard the 3D power system as a whole like a 2D power system, which does not utilize the inherent 3D structure and causes inefficiency. Considering that TSVs naturally form good partition boundaries, a hierarchical technique to analyze the 3D PDN regarding the power grid of each layer as a macro-model may lead to efficiency and offer an opportunity for further parallel speedup. Numerous studies spring up these years in the field of 3D PDN design. However, most studies tended to simply increase the number of TSVs to mitigate power supply problems. Since TSV fabrication causes tensile stress around TSVs and results in significant carrier mobility variation in the devices P/G TSV

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